A p-i-n junction diode based on locally doped carbon nanotube network

Abstract

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

In-materio computing in random networks of carbon nanotubes complexed with chemically dynamic molecules: a review

“…Another way to generate nonlinearity may be to selectively dope the channels of SWNT networks with triethyl oxonium hexachloroantimonate and polyethylenimine to form p-i-n junctions with strong builtin electric fields. Using this method, high-performance diodes with a high rectification ratio, large forward current, and low reverse saturation current have been realized [25], and the I-V characteristics show clear nonlinear rectifying properties. An asymmetric contact was found to effectively improve p-i-n diode performance [26].…”

High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures

“…They also have fully saturated surface bonds and no interface states. [11][12][13][14][15][16][17][18] If these materials can be used to collaboratively construct diodes, then their respective advantages can be fully utilized to achieve high device performance.…”

“…Diversied junctions have been used to form built-in electric elds for fabricating diodes based on the BP or carbon materials including p-n junction, heterojunction, and Schottky junction. 5,8,13,[17][18][19][20][21] We previously investigated a p-i-n junction diode based on locally-doped individual SWCNTs or an SWCNT network. This led to a rectication ratio of 10 4 and an ideal factor of 1.3.…”

“…This led to a rectication ratio of 10 4 and an ideal factor of 1.3. 13,17,18 A diode based on the gate-controlled BP/WSe 2 vertical heterojunction showed an ideal factor of 1.47. However, this diode had a low rectication ratio of 500 and a high series resistance of 5 MU.…”

Joint-Free Single-Piece Flexible Thermoelectric Devices with Ultrahigh Resolution p–n Patterns toward Energy Harvesting and Solid-State Cooling

“…However, it is not easy to find a flexible material possessing both p- and n-type TE properties . Only a few joint-free flexible TE devices have been reported, which are mainly fabricated with carbon nanotubes (CNTs) and their composites. − Xie et al reported compact-designed flexible TE modules with CNT films doped by drop-casting polyethylenimine solution . Kim et al reported a CNT fiber-based TE generator formed by brushing the solution of p- and n-type dopants on the CNT fiber …”