A Photovoltaic UV Sensor With a Ferroelectric Thin Film on Transparent Substrate

Lai, Szu Cheng; Yao, Kui; Chen, Yi Fan; Zhang, Lei; Lim, Yee-Fun

doi:10.1109/led.2013.2282393

Cited by 20 publications

(14 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although many studies have been conducted on developing ferroelectric based solar cells but the efficiencies are still much below the practical requirements. However, little attention has been paid to address the ultraviolet (UV)-detection properties of BFO or other ferroelectrics28293031. Most of the prior investigations have focused upon the spectral response of the ferroelectric materials when irradiated with different wavelengths of UV-light rather than understanding the time dependent detection28293031.…”

mentioning

confidence: 99%

“…However, little attention has been paid to address the ultraviolet (UV)-detection properties of BFO or other ferroelectrics28293031. Most of the prior investigations have focused upon the spectral response of the ferroelectric materials when irradiated with different wavelengths of UV-light rather than understanding the time dependent detection28293031. In general, the UV-detection properties are limited to large bandgap semiconductors, such as GaN, AlN, and ZnO3233.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

Kundu

Clavel

Biswas

et al. 2015

Sci Rep

View full text Add to dashboard Cite

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

Kundu

Clavel

Biswas

et al. 2015

Sci Rep

View full text Add to dashboard Cite

show abstract

“…16,17 For rhombohedral films prepared by sol-gel method, these have been attributed the (100)-orientation of PLZT thin films on Pt substrates to the presence of a PbO buffer layer while the (111)-orientation have been mainly associated with the lattice matching between filmsubstrate or to the effect an inter-metallic phase Pt [5][6][7] Pb in the early stage of the crystallization. 18 In addition, the (111)-preferred orientations for tetragonal PLZT films prepared by rf-sputtering have been attributed to lattice mismatch with the (111)-oriented platinum substrate.…”

Section: Resultsmentioning

confidence: 99%

“…% is particularly important because most of the properties of technological interest show their maximum values at this ratio. 4 In the thin film form, the great potential of the PLZT has been demonstrated over past years for applications in waveguides, 5 capacitors, 6 photovoltaic ultraviolet sensors, 7 and others.…”

mentioning

confidence: 99%

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

Melo

Araújo

Shvartsman

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO2/SiO2/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

show abstract

“…Thin films of many different ferroelectric materials (Pb 0.97 La 0.03 (Zr 0.52 Ti 0.48 )O 3 (PLZT) [92,93], PZT [94,95], and Bi 4 Ti 3 O 12 [96]) were employed in ultraviolet (UV) sensors. Lai et al designed and tested a photovoltaic ultraviolet (UV) detector with a unique structure [92]. This device was composed of an in-plane polarized PLZT thin film (1 μm) on a transparent silica substrate.…”

Section: Photodetectorsmentioning

confidence: 99%

Recent Advances in Ferroelectric Nanosensors: Toward Sensitive Detection of Gas, Mechanothermal Signals, and Radiation

Mistewicz

2018

Journal of Nanomaterials

View full text Add to dashboard Cite

A spontaneous polarization that occurs below the Curie temperature is characteristic for ferroelectric materials. This polarization is sensitive to many external conditions such as an electric field, mechanical deformation, temperature, and chemical and biological factors. Therefore, bulk ferroelectric materials have been used for decades in sensors and actuators. Recently, special attention has been paid to ferroelectric nanostructures that represent better sensing properties than their bulk counterparts. This paper presents a comprehensive survey of applications of nanoferroelectrics in different types of sensors, e.g., gas sensors and piezoelectric, pyroelectric, and piezoresistive sensors of mechanothermal signals, as well as photodetectors, ionizing radiation detectors, and biosensors. The recent achievements and challenges in these fields are summarized. This review also outlines the prospects for future development of sensors based on nanosized ferroelectrics.

show abstract

A Photovoltaic UV Sensor With a Ferroelectric Thin Film on Transparent Substrate

Cited by 20 publications

References 9 publications

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

Recent Advances in Ferroelectric Nanosensors: Toward Sensitive Detection of Gas, Mechanothermal Signals, and Radiation

Contact Info

Product

Resources

About