A proposal for a dual-band tunable plasmonic absorber using concentric-rings resonators and mono-layer graphene

Beiranvand, Behrokh; Соболев, А. С.; Sheikhaleh, Arash

doi:10.1016/j.ijleo.2020.165587

Cited by 16 publications

(9 citation statements)

References 41 publications

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“…The decrease in absorptivity at the indicated range can be assigned to the decrease in the grapheme. Detailed description of this phenomenon is discussed in other similar contributions [9].…”

Section: Dynamic Tunability Using a Single Layer Graphenementioning

confidence: 86%

“…During the recent decades, the efficient tunability of the optical spectrum of meta-material absorbers have intensely attracted the attention of many researchers, since they play a key role in a wide range of applications including tunable optical filters [1][2][3], nano-sensors [4,5], photo-detectors [6][7][8],optical switches, and so on. This efficient tunability stems from the efficiently adjustable Electro-Magnetic (EM) field strengths associated with resonant excitation of plasmons inside the metallic nano-structures [9]. Several efforts have so far been devoted to improve the performance of meta-material absorbers in terms of absorption efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…This is realizable through enhancement of the intensity of their electromagnetic plasmon fields at the desired wavelengths. Two typical methods have been proposed to improve the strength of these plasmon fields: 1) optimization of the structural parameters and materials [1][2][3][4][5][6][7][8][9], 2) assembly of the plasmonic nanoparticles in order to create strong coupling interactions between the plasmon fields of neighboring nanoparticles through hybridization [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of Tunable Fano Resonances In A Meta-Material Absorber Composed of Asymmetric Double Bars With Bent Arms

Mashkour

Koochaki

Ziabari

et al. 2021

Preprint

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In this paper a Metal-Insulator-Metal (MIM) plasmonic absorber consisting of asymmetric double bars with bent arms located on top of a silica layer coated on a metal film is proposed, and its resonant features are analyzed. The suggested structure supports both Fano and dipole perfect absorption resonances at the Near-Infrared Region (NIR). The asymmetry introduced into the structure can be induced by changing the bending angle or rotation angle of one of the antennas while the other one remains fixed. Simulation results demonstrate that by applying both asymmetry factors to the structure, one can have two individual Fano peaks at the same time. It is shown that the magnitude, central wavelength and line-width of the Fano peaks are adjustable by controlling the geometrical parameters of the structure. It is also indicated that, the quality factor (Q-factor) of the Fano resonance is inversely related to the degree of asymmetry introduced into the structure. According to the simulations, an ultra-narrow resonance peak with a bandwidth of 1.87 nm at the wavelength of 710 nm (corresponding to a Q-factor of 387) can be obtained by controlling the geometrical parameters. It is also discussed that, the absorptivity of Fano and the dipole peaks can be adjusted inversely, by manipulating the grapheme chemical potential. The ratio of the absorptivity to the chemical potential of graphene about-275 %/eV and 226 %/eV is calculated for the Fano peak and dipole peak, respectively. Accordingly, the presented structure is an adjustable NIR absorber with a fully tunable absorption spectrum which can be utilized in various applications from tunable reflectors and photo-detectors to ultra-narrowband and broadband optical modulators.

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Section: Dynamic Tunability Using a Single Layer Graphenementioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Demonstration of Tunable Fano Resonances In A Meta-Material Absorber Composed of Asymmetric Double Bars With Bent Arms

Mashkour

Koochaki

Ziabari

et al. 2021

Preprint

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“…This work details the fabrication, characterization, and measurement of identical Hall bar geometries in CVD graphene on both SiO 2 /Si and hBN/SiO 2 /Si substrates using the 4" wafer standard patterned with conventional photolithography. Previous research has shown the utility of large scale graphene in electro-optic devices due to its thin and nearly transparent nature [7,[18][19][20][21][22][23][24][25]. It is the intent of this effort to show that CVD graphene processed with conventional photolithography can be a cost-effective approach towards the realization of graphene electronics due to its inherent scalability and repeatability.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Micrometer Scale Graphene Structures for Large-Scale Ultra-Thin Electronics

Planillo

Alves

2022

Electronics

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Graphene offers many useful properties that can revolutionize modern electronic devices. Specifically, it provides high charge carrier mobility in a mechanically robust, atomically thin form factor. Many of these properties are observed in graphene which is prepared from exfoliated graphite and processed with electron beam lithography. These processes are both time intensive and cost- prohibitive for the large-scale production necessary for use in consumer electronics. This work details the processing and characterization of commercially available graphene from chemical vapor deposition (CVD) on SiO2/Si and on hBN-layered SiO2/Si wafers using conventional photolithography on the 4″ wafer standard. The findings indicate that the CVD graphene films are resilient after processing even for lengths up to 1 mm. Electrical characterization via resistance measurements and the Hall Effect at room temperature clearly indicates the influence of the substrate material on the graphene’s electrical properties. At these length scales, graphene on SiO2 resembles that of a lightly doped semiconductor in terms of its carrier density (7.8 × 1015 cm−2), yet its carrier mobility (2.6 cm2/Vs) resembles that of a metal. Graphene on hBN/SiO2 has a carrier density of 8.2 × 1012 cm−2 and carrier mobility of 2.68 × 103 cm2/Vs—comparable to existing high-mobility semiconducting materials. CVD graphene and conventional photolithography does provide a cost-effective means for producing large form-factor graphene devices for low to moderate mobility applications and eventually for large-scale monolithic graphene electronics.

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“…However, most of the research focuses on single-band and dual-band narrow-band perfect absorbers, while the research on multi-band ideal narrow-band perfect absorbers is relatively less. 21–24 This is because of the strict limitation, which makes it difficult to realize the narrow band perfect absorber of multi-band with simple absorber structure.…”

Section: Introductionmentioning

confidence: 99%

Multi-mode surface plasmon resonance absorber based on dart-type single-layer graphene

et al. 2022

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A proposal for a dual-band tunable plasmonic absorber using concentric-rings resonators and mono-layer graphene

Cited by 16 publications

References 41 publications

Demonstration of Tunable Fano Resonances In A Meta-Material Absorber Composed of Asymmetric Double Bars With Bent Arms

Demonstration of Tunable Fano Resonances In A Meta-Material Absorber Composed of Asymmetric Double Bars With Bent Arms

Fabrication and Characterization of Micrometer Scale Graphene Structures for Large-Scale Ultra-Thin Electronics

Multi-mode surface plasmon resonance absorber based on dart-type single-layer graphene

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