A protecting layer for the dielectric in AC plasma panels

Urade, T.; Iemori, Toshiaki; Osawa, Masumi; Nakayama, Noriaki; Morita, Itsuo

doi:10.1109/t-ed.1976.18397

Cited by 145 publications

(40 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, the MgO protective layer serves as a secondary electron emission layer, initiating the discharge. 5 Improving the performance of AC-PDPs and reducing the firing voltage of plasma (Vf) is essential, and can be achieved by using a protective layer with a higher ion-induced secondary electron (IISE) yield, γ. Therefore, γ is one of the most important parameters of the MgO protective layer for improving the discharge characteristics, 1,6 and the IISE phenomenon in MgO films has been intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

et al. 2015

View full text Add to dashboard Cite

The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS) energy was located at approximately 4.2 eV above the valence band maximum (VBM) and the surface band gap width (E g S ) was approximately 6.3 eV. The bulk F center (F B ) energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were F S and F B , induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ) for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

show abstract

Section: Introductionmentioning

confidence: 99%

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

et al. 2015

View full text Add to dashboard Cite

show abstract

“…In addition, MgO films can sustain the plasma damage effectively because it is well-known as an excellent protecting layer of a plasma display panel (PDP) from erosion by plasma ion bombardment. 13,14 Many researches indicate that MgO can play a significant role in controlling the polarity of ZnO film.15-17 Additionally, TFT device parameter such as field effect mobility is mostly related to the crystallinity and defect density of the channel materials. In general, MgO films can possess a large number of excess oxygen ions.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

Improvement of Mobility in ZnO Thin Film Transistor with an Oxygen Enriched MgO Gate Dielectric

Chen

Jeng

Chen

2012

ECS Solid State Letters

View full text Add to dashboard Cite

The performance of bottom-gate ZnO thin film transistors (TFTs) using MgO gate dielectrics evaporated with and without introducing oxygen have been investigated. The oxygen introduced during MgO deposition improves the field-effect mobility significantly as compared to the device without introducing oxygen during MgO deposition. The oxygen-introduced MgO exhibits a dielectric constant of 10.9 and the field-effect mobility of the TFT device is enhanced to 78.3 cm 2 /V s. The threshold voltages can also be related to whether the oxygen is introduced into MgO or not. The interface between oxygen-introduced MgO and ZnO is examined and its connection with mobility enhancement is discussed. © 2012 The Electrochemical Society. [DOI: 10.1149/2.003205ssl] All rights reserved. Oxide semiconductor-based thin film transistors (TFTs) as a replacement for conventional Si-based TFTs in electrical and optical devices have been extensively studied due to their excellent optical and electrical properties.1-3 Among the numerous oxide semiconductors, ZnO has been widely used as channel layer in TFTs in recent years, 4-6 owing to its simple composition and expeditious fabrication. In order to accumulate a sufficient number of charges in the TFTs channel, the use of high-dielectric constant (k) materials is suggested, which leads to a reduction in the operating voltage.7-9 Magnesium oxide (MgO) is a candidate of high-k gate dielectrics (k = 9.4∼9.8) 10,11 because of its good isolation 10,12 and chemically inert properties. In addition, MgO films can sustain the plasma damage effectively because it is well-known as an excellent protecting layer of a plasma display panel (PDP) from erosion by plasma ion bombardment. 13,14 Many researches indicate that MgO can play a significant role in controlling the polarity of ZnO film.15-17 Additionally, TFT device parameter such as field effect mobility is mostly related to the crystallinity and defect density of the channel materials. In general, MgO films can possess a large number of excess oxygen ions. 18 In this work we attempted to utilize these excess oxygen ions to compensate for the defect density, such as oxygen vacancies in the channel material. Therefore, MgO thin films that served as gate dielectric in ZnObased TFTs were prepared with and without introducing oxygen by electron beam evaporation. The material and electrical characteristics of the MgO gate dielectrics for the ZnO-based TFTs are investigated to explore the function of the MgO dielectric.The bottom-gate, top contact TFT devices were fabricated on glass substrates. Prior to the MgO deposition, an Al gate electrode was first deposited by electron beam evaporation onto a glass substrate through a shadow mask. MgO films were then deposited with a thickness of 180 nm by electron beam evaporation from the MgO slugs (Kurt J. Lesker, 99.99% purity) with and without introduction of an O 2 gas flow of 50 sccm. The ZnO active layer of a 30 nm thick was deposited on the MgO dielectric by sputtering from a ZnO target (Elecmat, 99.995% ...

show abstract

“…An additional important role of MgO thin film is to lower the discharge voltage, which leads low cost for the production of PDP. Moreover, MgO shows higher secondary electron emission coefficient among the many candidates for the protective material such as CeO 2 , La 2 O 3 and ZrO 2 [179,180].…”

Section: Device Structurementioning

confidence: 99%

Fabrication techniques and material properties of dielectric MgO thin films—A status review

Raj¹,

Jayachandran

Sanjeeviraja

2010

CIRP Journal of Manufacturing Science and Technology

View full text Add to dashboard Cite

A protecting layer for the dielectric in AC plasma panels

Cited by 145 publications

References 3 publications

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Improvement of Mobility in ZnO Thin Film Transistor with an Oxygen Enriched MgO Gate Dielectric

Fabrication techniques and material properties of dielectric MgO thin films—A status review

Contact Info

Product

Resources

About