This paper describes a new, convenient "underc u t a n d b a c k f i l l " t e c h n i q u e f o r f o r m i n g e d g e d e f i n e d submicrometer elements based only on standard optic a l l i t h o g r a p h y a n d v e r t i c a l ( a n i s o t r o p i c ) d r y e t c hi n g . MOSFETs having physical channel lengths from 0.3 vm t o = 1.0 pm c a n b e f a b r i c a t e d u s i n g t h i s approach.