Silicon
 2022
DOI: 10.1007/s12633-022-01660-4
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A Qualitative Review on Tunnel Field Effect Transistor- Operation, Advances, and Applications

Sadhu Satya Sravani
1
,
B. Balaji
2
,
K. Sambasiva Rao
3
et al.
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Cited by 4 publications
(1 citation statement)
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“…The lateral electric field significantly influences the breakdown voltage of the MESFET. By reducing the lateral electric field, the proposed design can enhance the device's ability to handle high voltages without encountering premature breakdown as shown in Figure 6 [29].…”
Section: Lateral Electric Fieldmentioning
confidence: 99%

Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

Krishnamurthy,
Venkatarami Reddy,
Radhamma
et al. 2023
IJE
2
0
0
0
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“…The lateral electric field significantly influences the breakdown voltage of the MESFET. By reducing the lateral electric field, the proposed design can enhance the device's ability to handle high voltages without encountering premature breakdown as shown in Figure 6 [29].…”
Section: Lateral Electric Fieldmentioning
confidence: 99%

Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

Krishnamurthy,
Venkatarami Reddy,
Radhamma
et al. 2023
IJE
2
0
0
0
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Device Design and Modeling of Fin Field Effect Transistor for Low Power Applications

Soma
1
,
Suresh
2
,
Balaji
3
et al. 2022
Lecture Notes in Networks and Systems
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Design and Qualitative Analysis of 5-nm Nanowire TFET with Spacer Engineering

Vishnupriyan1,
ChayaDevi
2
,
Megala
3
et al. 2023
J. Electron. Mater.
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