2014
DOI: 10.1016/j.jpowsour.2013.07.009
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A rapid analytical assessment tool for three dimensional electrode microstructural networks with geometric sensitivity

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Cited by 28 publications
(51 citation statements)
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“…Across these scales variations in local reactant distributions can contribute to significant losses. At the microstructural scale, charge transport holds strong influence [10,11,13,14], while variation in gas concentration may occur [14]. At the device scale, geometry contributes to both ohmic [18,19,22] and concentration losses [17,21].…”
Section: Introductionmentioning
confidence: 99%
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“…Across these scales variations in local reactant distributions can contribute to significant losses. At the microstructural scale, charge transport holds strong influence [10,11,13,14], while variation in gas concentration may occur [14]. At the device scale, geometry contributes to both ohmic [18,19,22] and concentration losses [17,21].…”
Section: Introductionmentioning
confidence: 99%
“…This task proves difficult when translating microstructural or component level details to a cell or stack level. Finite element analysis (FEA) and models based on the Lattice Boltzmann Method (LBM) can capture details of mass and charge transport within the microstructure [11,14e16,23], but these approaches entail significant requirements for memory [11], computational time [11,14], and due diligence in mesh generation [23]. Detailed computational fluid dynamics (CFD) models also require large numbers of computational cells and related degrees of freedom to accurately capture multi-dimensional variations throughout the SOFC component layers [24].…”
Section: Introductionmentioning
confidence: 99%
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