A rate-equation model for the growth of metallic thin films in ion beam assisted deposition

Sillanpää, J.; Koponen, Ismo T.; Grønbech‐Jensen, Niels

doi:10.1016/s0168-583x(01)00821-7

Cited by 7 publications

(2 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6 have been developed over the last several decades. Most of these originated and evolved in the context of specific experimental techniques, such as Auger Electron Spectroscopy (AES) [33][34][35][36] , ion-beam assisted deposition [37][38][39] , and RHEED 40,41 .…”

Section: B Layer-wise Rate Equation Model Of Epitaxial Growthmentioning

confidence: 99%

“…It is convenient to categorize these models according to how much they attempt to incorporate atom-level kinetics. Models by Kariotis et al 41 , Trofimov et al [42][43][44][45][46] , and Koponen 37,38 draw explicitly on nucleation theory 47 , and include additional equations to Eq. 6 representing the adatom and island densities on each layer.…”

Section: B Layer-wise Rate Equation Model Of Epitaxial Growthmentioning

confidence: 99%

See 1 more Smart Citation

Quantitative modeling ofin situx-ray reflectivity during organic molecule thin film growth

2011

View full text Add to dashboard Cite

Synchrotron-based x-ray reflectivity is increasingly employed as an in situ probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been developed and employed for this purpose, yet no detailed, comparative studies of their scope and accuracy exists in the literature. Using experimental data obtained from hyperthermal deposition of pentane and diindenoperylene (DIP) on SiO2, we compare and contrast three such models, both with each other and with detailed characterization of the surface morphology using ex-situ atomic force microscopy (AFM). These two systems each exhibit particular phenomena of broader interest: pentacene/SiO2 exhibits a rapid transition from rough to smooth growth. DIP/SiO2, under the conditions employed here, exhibits growth rate acceleration due to a different sticking probability between the substrate and film. In general, independent of which model is used, we find good agreement between the surface morphology obtained from fits to the in situx-ray data with the actual morphology at early times. This agreement deteriorates at later time, once the root-mean squared (rms) film roughness exceeds about 1 ML. A second observation is that, because layer coverages are under-determined by the evolution of a single point on the reflectivity curve, we find that the best fits to reflectivity data -corresponding to the lowest values of χ 2 ν -do not necessarily yield the best agreement between simulated and measured surface morphologies. Instead, it appears critical that the model reproduce all local extrema in the data. In addition to showing that layer morphologies can be extracted from a minimal set of data, the methodology established here provides a basis for improving models of multilayer growth by comparison to real systems.

show abstract