A Review of 3-Dimensional Wafer Level Stacked Backside Illuminated CMOS Image Sensor Process Technologies

Wuu, Shou-Gwo; Chen, Hsin-Li; Chien, Hung‐Chang; Enquist, P.M.; Guidash, Michael; McCarten, J. Riley

doi:10.1109/ted.2022.3152977

Cited by 13 publications

(2 citation statements)

References 31 publications

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“…[26] and the image sensor [27] technologies, we can adopt the backside fabrication process. After the fabrication of Schottky barrier FDSOI FETs in Fig.…”

Section: Proposed Device and Simulation Approachmentioning

confidence: 99%

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Lee

Chang

2023

Preprint

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In this work, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) which can switch the polarity without program gate (PG). In FeRFETs, the non-volatile and reconfigurable electrostatic doping by ferroelectric enables the type conversion without PG. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (> 1×1021 cm-3), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field (EC) is important to maximize the performance of FeRFETs.

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“…[26] and the image sensor [27] technologies, we can adopt the backside fabrication process. After the fabrication of Schottky barrier FDSOI FETs in Fig.…”

Section: Proposed Device and Simulation Approachmentioning

confidence: 99%

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Lee

Chang

2023

Preprint

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“…[1][2][3] Hence, three-dimensional stacked CMOS image sensors (3D-CISs) have been developed. 4,5 In a 3D-CIS, the pixel part and the pixel data processing function are manufactured on separate wafers, and the wafers are bonded by Cu-Cu hybrid bonding or through silicon via (Cu-TSV). [6][7][8] However, if the barrier layer formed between the wafers bonded by Cu-Cu hybrid bonding is insufficient to prevent the diffusion of Cu, there is a concern of cause Cu contamination.…”

mentioning

confidence: 99%

Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors

Okuyama,

Kadono,

Onaka-Masada

et al. 2024

ECS J. Solid State Sci. Technol.

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The reduction in SiO2/Si interface state density (Dit) at the SiO2/Si interface region is important for improving the performance of complementary metal-oxide semiconductor (CMOS) image sensors. The CH3O-ion-implanted region stores hydrogen and releases the stored hydrogen during the subsequent heat treatment. This study demonstrates that a CH3O-ion-implanted epitaxial silicon wafer can reduce the Dit and Pb0 center density in SiO2/Si interface regions, as analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. Both Dit and Pb0 center density in the CH3O-implanted wafer decreased with increasing heat treatment temperature. Moreover, the activation energy is estimated to be 1.57 eV for the hydrogen termination reactions induced by the CH3O-ion-implanted wafer. The activation energy is close to those of hydrogen molecules and Si dangling bonds at the SiO2/Si interface. The termination effect of the CH3O-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.

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The Invention and Development of CMOS Image Sensors

Fossum

2023

75th Anniversary of the Transistor

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A Review of 3-Dimensional Wafer Level Stacked Backside Illuminated CMOS Image Sensor Process Technologies

Cited by 13 publications

References 31 publications

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors

The Invention and Development of CMOS Image Sensors

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A Review of 3-Dimensional Wafer Level Stacked Backside Illuminated CMOS Image Sensor Process Technologies

Cited by 13 publications

References 31 publications

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Program Gate-Less Reconfigurable FETs Based on Ferroelectric

Hydrogen Termination Effect on SiO2/Si Interface State Density in CH3O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors

The Invention and Development of CMOS Image Sensors

Contact Info

Product

Resources

About

Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors