2011
DOI: 10.1016/j.ijthermalsci.2010.12.004
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A review of thermal rectification observations and models in solid materials

Abstract: Thermal rectification is a phenomenon in which thermal transport along a specific axis is dependent upon the sign of the temperature gradient or heat current. This phenomenon offers improved thermal management of electronics as size scales continue to decrease and new technologies emerge by having directions of preferred thermal transport. For most applications where thermally rectifying materials could be of use they would need to exhibit one direction with high thermal conductivity to allow for efficient tra… Show more

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Cited by 322 publications
(292 citation statements)
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“…Since there are already thermal diodes achieved with different temperature-dependent conductivity (Dames, 2009) or emissivity (Roberts and Walker, 2011), in our study we consider the bulk material itself to be homogenous and isotropic. In the homogenous material, the local heat flux density is expressed as  J T = − ∇ κ , according to Fourier's Law, where J is the heat flux, κ is the material's thermal conductivity and on the vacuum interface of the holes, heat transfer follows the Stefan-Boltzmann Law…”
Section: Resultsmentioning
confidence: 99%
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“…Since there are already thermal diodes achieved with different temperature-dependent conductivity (Dames, 2009) or emissivity (Roberts and Walker, 2011), in our study we consider the bulk material itself to be homogenous and isotropic. In the homogenous material, the local heat flux density is expressed as  J T = − ∇ κ , according to Fourier's Law, where J is the heat flux, κ is the material's thermal conductivity and on the vacuum interface of the holes, heat transfer follows the Stefan-Boltzmann Law…”
Section: Resultsmentioning
confidence: 99%
“…Theoretical models for thermal rectifiers are proposed relying on various mechanisms (Roberts and Walker, 2011), including different temperature-dependent thermal properties between dissimilar materials at a contact (Stevenson et al, 1991;Dames, 2009;Kobayashi et al, 2009), asymmetric design of nanostructure (Wu and Li, 2008;Yang et al, 2009), and quantum thermal systems, such as quantum dots and other quantum heterojunctions (Scheibner et al, 2007;Ruokola et al, 2009;Wu and Segal, 2009;Ren and Zhu, 2013a). Similar concepts are even extended to the spin Seebeck diode and transistor (Ren, 2013;Ren and Zhu, 2013b;Ren et al, 2013), and the multiferroic thermal diode (Chotorlishvili et al, 2015), multiferroic switch and memory .…”
Section: Introductionmentioning
confidence: 99%
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“…This Born-Markov limit fundamentally deviates from NIBA predictions comprising a ∆ 2 ω c prefactor, see Eq. (41). This discrepancy may be associated to a recent result showing that in the spin-spin-bath model the dissipative dynamics predicted by the Redfield equation does not conform with NIBA [34].…”
Section: Born-markov Expressionsmentioning
confidence: 99%
“…One, consisting of a NIS junction, and a second one, consisting of a SIS' Josephson tunnel junction [40]. Although never considered in the literature so far for such a purpose [41], superconducting tunnel junctions appear particularly well suited for the implementation of electron heat rectifiers. Heat transport in such structures is deeply influenced by the strong temperature dependence of the superconducting density of states.…”
Section: Heat Diodementioning
confidence: 99%