A Review on Conduction Mechanisms in Dielectric Films

Chiu, Fu-Chien

doi:10.1155/2014/578168

Cited by 999 publications

(776 citation statements)

References 24 publications

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“…To understand the sandwich-structured nanocomposites with different layer arrangements, it is informative to investigate the conduction mechanisms of its components, i.e., c-BCB/BNNS and c-BCB/BT, under elevated temperatures. Several conduction mechanisms exist in polymeric materials, including the hopping conduction, the Schottky charge injection (thermionic emission) and the PooleFrenkel (P-F) emission (20,25). Hopping conduction is commonly observed in amorphous polymers such as c-BCB, as we previously demonstrated (8).…”

Section: Discussionmentioning

confidence: 73%

“…1B). It is important to note that the low-field room temperature dielectric loss is drastically different from the loss shown at high electric fields and elevated temperatures because of the nonlinear conduction related to charge injection and leakage current (20)(21)(22)(23). Indeed, at 150°C and 200 MV m −1 , the dielectric loss rises rapidly from 18% of the pristine c-BCB to more than 47% of c-BCB/BT as determined from the electric displacementelectric field (D-E) loops (Fig.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Sandwich-structured polymer nanocomposites with high energy density and great charge–discharge efficiency at elevated temperatures

Liu

Yang

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

346

202

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The demand for a new generation of high-temperature dielectric materials toward capacitive energy storage has been driven by the rise of high-power applications such as electric vehicles, aircraft, and pulsed power systems where the power electronics are exposed to elevated temperatures. Polymer dielectrics are characterized by being lightweight, and their scalability, mechanical flexibility, high dielectric strength, and great reliability, but they are limited to relatively low operating temperatures. The existing polymer nanocomposite-based dielectrics with a limited energy density at high temperatures also present a major barrier to achieving significant reductions in size and weight of energy devices. Here we report the sandwich structures as an efficient route to high-temperature dielectric polymer nanocomposites that simultaneously possess high dielectric constant and low dielectric loss. In contrast to the conventional single-layer configuration, the rationally designed sandwich-structured polymer nanocomposites are capable of integrating the complementary properties of spatially organized multicomponents in a synergistic fashion to raise dielectric constant, and subsequently greatly improve discharged energy densities while retaining low loss and high charge-discharge efficiency at elevated temperatures. At 150°C and 200 MV m −1 , an operating condition toward electric vehicle applications, the sandwich-structured polymer nanocomposites outperform the state-of-the-art polymer-based dielectrics in terms of energy density, power density, charge-discharge efficiency, and cyclability. The excellent dielectric and capacitive properties of the polymer nanocomposites may pave a way for widespread applications in modern electronics and power modules where harsh operating conditions are present.electrical energy storage | dielectric | polymer nanocomposites | capacitors | high temperature F ilm capacitors store electrical energy in dielectric materials in the form of an electrostatic field between two electrodes. They possess the highest power density (on the order of megawatts) and the best rate capability (on the order of microseconds) among the electrical energy storage devices and are critical for power electronics, power conditioning, and pulsed power applications (1-3). For instance, DC bus capacitors are essential components in the power inverters of electric vehicles for the conversion of direct current to alternating current, which is required to drive the vehicle's motor. Compared with ceramics, polymeric materials offer inherent advantages for capacitors, including their light weight, facile processability, scalability, high breakdown strength, and graceful failure mechanism (1-5). However, dielectric polymers often suffer from low operating temperatures, which fall short of the emerging demands for energy storage and conversion in harsh environments commonly present in automobile, aerospace power systems, and advanced microelectronics (6, 7). For example, to accommodate biaxially oriented polypropylen...

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Section: Discussionmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Sandwich-structured polymer nanocomposites with high energy density and great charge–discharge efficiency at elevated temperatures

Liu

Yang

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

346

202

View full text Add to dashboard Cite

show abstract

“…It is suggested that within this region, the injected electrons are partly captured by the traps in the films, while others contribute to the total current [28,29]. Comparing with the first cycle, the I-V curve of the subsequent switching is featured by only two regions which corresponds well with the trap-free SCLC model [30]. The absence of this region in the subsequent switching implies that traps in the films have been filled during the pristine SET process.…”

Section: Zno Resistive Switching Memorymentioning

confidence: 76%

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

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Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the O2 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition.

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“…This type of thermionic emission is one of the most often observed conduction mechanism in oxide especially in relative high temperature [71]. The current density JSE can be related to electric field (E) and temperature (T) by the Schottky equation as shown in Equation (1).…”

Section: Schottky Emissionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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A Review on Conduction Mechanisms in Dielectric Films

Cited by 999 publications

References 24 publications

Sandwich-structured polymer nanocomposites with high energy density and great charge–discharge efficiency at elevated temperatures

Sandwich-structured polymer nanocomposites with high energy density and great charge–discharge efficiency at elevated temperatures

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

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