2022
DOI: 10.1007/s12633-021-01643-x
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A Review on—Spintronics an Emerging Technology

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Cited by 23 publications
(6 citation statements)
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“…The ongoing tremendous development of electronic devices with the aim of further miniaturization while increasing performance leads to several major and further growing challenges, such as a need for reduced power consumption and improved heat dissipation [1]. The field of spintronics [2] offers solutions to these challenges, as it provides enormous potential for high-density data storage, high processing speed, and low power requirements [3][4][5][6]. Within this research field, effects such as giant magnetoresistance (GMR) [7][8][9] and tunnel magnetoresistance (TMR) [10][11][12] enable a wide variety of applications.…”
Section: Introductionmentioning
confidence: 99%
“…The ongoing tremendous development of electronic devices with the aim of further miniaturization while increasing performance leads to several major and further growing challenges, such as a need for reduced power consumption and improved heat dissipation [1]. The field of spintronics [2] offers solutions to these challenges, as it provides enormous potential for high-density data storage, high processing speed, and low power requirements [3][4][5][6]. Within this research field, effects such as giant magnetoresistance (GMR) [7][8][9] and tunnel magnetoresistance (TMR) [10][11][12] enable a wide variety of applications.…”
Section: Introductionmentioning
confidence: 99%
“…The interest in halfmetallicity lies in its spintronic features, where one spin is conducting while the other spin is insulating. [3][4][5] This property provides completely novel capabilities for controlling and manipulating the magnetic moment of itinerant electrons and opens new avenues for utilizing this spin dependence in various devices. The investigation of half-metallicity in spintronics has opened up new avenues for the fabrication of spin-based electronic devices such as spin valves, magnetic tunnel junctions and spin transistors, which depend on differentiating and manipulating the spin-polarized currents.…”
Section: Introductionmentioning
confidence: 99%
“…However, the shortcomings, such as inherent leakage current, the necessity of large numbered transistors to store a single bit, the occupancy of large silicon area, etc., outweigh its other benefits [1]. This triggered a huge interest in the utilization of spintronic devices for IMC [15,16]. The spintronic devices are non-volatile memory (NVM) devices, where along with charge, spin of electrons also carries information.…”
Section: Introductionmentioning
confidence: 99%