A schottky barrier junction based on nanometer‐scale interpenetrating GaP/Gold networks

Abstract

An interpenetrating GaP and gold nanometer‐scale network system has been formed by electrochemical deposition of the metal on a nanoporous n‐type semiconductor GaP network. The electrical characteristics of the system–in particular capacitance and current–voltage measurements–indicate that a semiconductor/metal Schottky barrier junction with a huge internal contact area is produced, which could find applications in solid‐state electronic devices.

Interface characterization of nanocrystalline CdS/Au junction by current–voltage and capacitance–voltage studies

“…13 In the present study the uncapped nano-CdS was grown by a chemical route 15 ide layer at nano-CdS/Au junction would result in a distribution of applied voltage across the space charge layer and the oxide layer. 8,16,17 Because of the distribution of the potential across the above layers, a series resistance is introduced which results in the deviation from an ideal Schottky behavior and accordingly the I -V relationship as given in Eq. ͑1͒ needs modification.…”

“…But as our motivation is to measure the barrier height in forward bias, no attempts were made to measure the reverse bias current which is expected to be small. 8 Nanocrystalline semiconductors with high surface to volume ratio and a thin oxide layer introduces a high density of surface traps. These localized states provide surface channel current originating from the recombination and generation of carriers in the depletion layer formed between the oxide and the nanostructure CdS layer, which ultimately influence the device characteristics.…”

“…Semiconductor nanostructures in recent times have gained considerable importance because of their unusual optical, 1-6 electrical 7 and device [8][9][10][11][12] properties. The unusual properties arise due to the quantum confinement effect [2][3][4][5]13 when the crystalline size is comparable to the Bohr-exciton radius.…”

Electrochemical Assembly of Ordered Macropores in Gold

“…This differs from our experience with titania, which tends to form shells around the colloidal spheres, but does not grow in the grain boundaries. [7,10] It is clear that electrochemical deposition results in so-called volume-templated structures, [12,25] as opposed to the surface-templated structures that are obtained by liquid-phase chemistry, sol-gel chemistry, or chemical vapor deposition. In volume-templated structures, the material grows both in the void space between the building blocks of the template, as well as on their surface.…”

Electrodeposition and Photoelectrochemistry of Cu2O in Aqueous Solutions

“…Martin has shown that it is possible to obtain nanoscale 188 P. E. de Jongh, D. Vanmaekelbergh and J. J. Kelly structures by growing semiconductors such as Ti02 and ZnO in porous A1203 or polycarbonate membranes [11]. Also composite materials could be prepared, with an intimité electrical contact between the two components, and an extremely large internal interface area [12,13]. Composite materials consisting of suitable, interpenetrated n-and p-type semiconductors could present a wide range of interesting possible applications such as electroluminescent devices and solid state solar cells.…”