A Self-Powered Fast-Response Ultraviolet Detector of p–n Homojunction Assembled from Two ZnO-Based Nanowires

Wang, Yumei; Chen, Ying; Zhao, Wanqiu; Ding, Long; Wen, Li; Li, Haixia; Jiang, Fan; Su, Jun; Li, Luying; Liu, Nishuang; Gao, Yihua

doi:10.1007/s40820-016-0112-6

Cited by 42 publications

(13 citation statements)

References 32 publications

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“…Generally, there are two types of 1D nanowire based ZnO homojunction: two nanowires with n‐ and p‐type conductivity respectively and one nanowire with n‐ and p‐type conductivity at different edges. Figure a shows a ZnO homojunction photodetector with two ZnO nanowires with n‐ and p‐type conductivity . The p‐type doping of the ZnO nanowire was achieved by Sb doping during a CVD process.…”

Section: Photodetectors Based On Hybrid Structuresmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

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Section: Photodetectors Based On Hybrid Structuresmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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“…In recent years, ultraviolet (UV) detection has gained tremendous research attentions inspired by a wide range of applications in optoelectronics, environmental and biological monitoring, industrial automation, flame sensing, military communication, and space exploration [1][2][3][4][5][6][7][8][9][10]. The UV photodetectors feature the high sensitivity, fast response, low power consumption, and stable operation and thus can be utilized in the various aforementioned applications [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

et al. 2020

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HIGHLIGHTS • Enhancement of UV photoresponse by the incorporation of various plasmonic nanoparticles in the detector architecture. • Detailed explanation for the photocurrent enhancement mechanism by the finite-difference time domain (FDTD) simulation and strong plasmon absorption. • Systematic comparison and demonstration of the superior photoresponse of homogeneously alloyed AgAu nanoparticles as compared to the monometallic nanoparticles. ABSTRACT Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W −1 , detectivity of 2.4 × 10 12 Jones and external quantum efficiency of 3.6 × 10 4 % with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.

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“…Self-powered and high-sensitivity miniature photodetectors are very attractive for a broad range of applications, spanning the imaging, environmental monitoring, and biomedical diagnostics fields [1][2][3][4][5][6][7]. Two-dimensional (2D) materials offer the opportunity to produce the performance of self-powered and high-sensitivity miniature photodetectors [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

et al. 2019

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HIGHLIGHTS • 2D Mo 2 C was produced by a modified chemical vapor deposition method, and 2D Mo 2 C-Au was formed as an asymmetric contact structure with a large work function difference. • Mo 2 C/MoS 2 /Au photodetectors powered by asymmetric contact structure can work under self-powered condition with a responsivity of 10 −1 mA W −1. The detection performance of the photodetectors can be stable for at least 110 days.

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A Self-Powered Fast-Response Ultraviolet Detector of p–n Homojunction Assembled from Two ZnO-Based Nanowires

Cited by 42 publications

References 32 publications

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

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