A Sensitivity Controllable Thermopile Infrared Sensor by Monolithic Integration of a N-channel Metal Oxide Semiconductor

Abstract

We report a sensitivity controllable infrared (IR) sensor composed of a thermopile and a n-channel metal oxide semiconductor (NMOS). In the sensor, the cathode of the thermopile is connected with the gate of NMOS. Such a sensor is fabricated by using a CMOS-compatible monolithic integration process. Compared with the separate thermopile IR sensor, sensitivity of the thermopile IR sensor integrated with NMOS can be remarkably enhanced by 357%. In addition, the drain bias voltage of the NMOS can be employed as a quick-response switch. The fabrication process of this device is quite simple and compatible with CMOS processes, thus such a thermopile IR sensor integrated with NMOS is low-cost and suitable for mass production. Moreover, the integration approach can be further applied to develop thermopile arrays for high-resolution imaging.

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“…Figure a shows a schematic view of a thermopile IR sensor . They provide noncontact detection, mobility, simplicity of use, and low cost, wherein sensitivity is a vital characteristic to describe the performance of thermopiles among all other variables …”

“…88 They provide noncontact detection, mobility, simplicity of use, and low cost, wherein sensitivity is a vital characteristic to describe the performance of thermopiles among all other variables. 89 It is effective to quickly test a subject's respiratory rate before they enter a space in order to evaluate potential dangers in their direction and control the spread of COVID-19. Researchers are looking into the possibility of thermopilebased respiratory screening, a novel yet cost-effective method of screening a subject by monitoring their respiration rate.…”