A simple model to determine multiplication and noise in avalanche photodiodes

Ong, Duu Sheng; Li, K. F.; Rees, G.J.; David, J.P.R.; Robson, P.N.

doi:10.1063/1.367111

Cited by 92 publications

(69 citation statements)

References 5 publications

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“…The exception is the data of Ong et al [8] for electrons which reveals a weakness in the Liverpool model. The factor governing the softness of the dead space, σ, is limited to the range 0 to 1 (equations are equivalent if σ is replaced by 1/σ) so that the slope of h(z) at z = d from Monte Carlo data can be smaller than the smallest value allowed by the Liverpool model for σ = 1.…”

Section: Comparison With Monte Carlo Datamentioning

confidence: 69%

“…The difference between the three models is insignificant even for the data of Ong et al [8] where the Liverpool model does not give as good a fit as the other two models.…”

Section: Significance For Excess Noise Factormentioning

confidence: 70%

“…6) and Ong et al [8] for electrons (lower set of curves). Single carrier multiplication is assumed and the multiplication, M, is varied by changing the multiplication region width.…”

Section: Significance For Excess Noise Factormentioning

confidence: 99%

“…The three models described in the previous section have been fitted to seven sets of Monte Carlo data [3,8,9]. One data set [3], shown in Fig.…”

Section: Comparison With Monte Carlo Datamentioning

confidence: 99%

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Comparison of different models of non‐local impact ionization for low noise avalanche photodiodes

Marsland

2011

Phys. Status Solidi C

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The dead space model of non-local impact ionization has been developed independently by three different research groups in order to include a 'soft' dead space. This paper seeks to compare these models for the first time. The models are fitted to Monte Carlo simulation data and it is found that there are no significant differences between the models except that the Liverpool model cannot be used to fit one data set which has a very soft dead space. Likewise the models give very similar results when used to calculate the excess noise factor for low noise avalanche photodiodes.

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Section: Comparison With Monte Carlo Datamentioning

confidence: 69%

“…The difference between the three models is insignificant even for the data of Ong et al [8] where the Liverpool model does not give as good a fit as the other two models.…”

Section: Significance For Excess Noise Factormentioning

confidence: 70%

“…6) and Ong et al [8] for electrons (lower set of curves). Single carrier multiplication is assumed and the multiplication, M, is varied by changing the multiplication region width.…”

Section: Significance For Excess Noise Factormentioning

confidence: 99%

“…The three models described in the previous section have been fitted to seven sets of Monte Carlo data [3,8,9]. One data set [3], shown in Fig.…”

Section: Comparison With Monte Carlo Datamentioning

confidence: 99%

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Comparison of different models of non‐local impact ionization for low noise avalanche photodiodes

Marsland

2011

Phys. Status Solidi C

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“…A common technique is to solve the coupled integral equations [6], which was later on improved by considering a 'softness' factor and the history dependence of the ionizing carrier [7]. The random path length (RPL) is another popular technique in implementing Monte Carlo simulation for calculating multiplication and excess noise factors for APDs and HAPDs [8,9]. In the latter technique, impactionization coefficients are calculated by Monte Carlo simulation, first.…”

Section: Introductionmentioning

confidence: 99%

A simple empirical model for calculating gain and excess noise in GaAs/Al.XI.Ga1-.XI.As APDs (0.3.LEQ..XI..LEQ.0.6)

Soroosh

Moravvej-Farshi

Saghafi

2008

IEICE Electron. Express

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Abstract:In this paper, we present a simple empirical model for calculating gain and excess noise in heterojunction GaAs/Al ξ Ga 1−ξ As APDs (0.3 ≤ ξ ≤ 0.6), without going through the relatively complicated and time consuming Monte Carlo simulation, commonly used for such devices. In this model, we present a set of empirical formula which can predict a distribution function for ionization path length for a given electric field throughout multiplication region. To determine the optimized values of the adjustable parameters used in our empirical model, we train a back-propagation neural network. The results are in excellent agreement with those obtained by the random path length (RPL) technique. Keywords: avalanche photodiode, Monte Carlo simulation Classification: Photonics devices, circuits, and systems R. Grey, "Low multiplication noise thin Al 0.6 Ga 0.4 As avalanche photodiodes," IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1310-1317, July 2001 [6] M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 546-552, March 1992. [7] R. J. McIntyre, "A new look at impact ionization-part I: A theory of gain, noise, breakdown probability, and frequency response," IEEE Trans. ReferencesElectron Devices, vol. 46, no. 8, pp. 546-552, Aug. 1999. [8] D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, and P. N. Robson, "A simple model to determine multiplication and noise in avalanche photodiodes,"

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Advantages of thin single‐photon avalanche diodes

Tan¹,

Ong²,

Yow³

2007

Physica Status Solidi (a)

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The breakdown characteristics and timing jitter of thin and thick GaAs single‐photon avalanche diodes are analyzed using a random ionization path length model. The larger relative dead space in thin devices is found to increase the sharpness of breakdown probability curves. Thin devices also produce lower timing jitter as a result of larger feedback ionization at high fields and weak dependence of jitter on dead space. Thus, if the dark count rate associated with higher electric field can be compensated, then thin devices may offer better performance in terms of faster breakdown and lower timing jitter, in addition to the known benefits of shorter detector dead time and velocity overshoot effects. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A simple model to determine multiplication and noise in avalanche photodiodes

Abstract: Articles you may be interested inModeling of avalanche multiplication and excess noise factor in In 0.52 Al 0.48 As avalanche photodiodes using a simple Monte Carlo model J. Appl. Phys.

Cited by 92 publications

References 5 publications

Comparison of different models of non‐local impact ionization for low noise avalanche photodiodes

Comparison of different models of non‐local impact ionization for low noise avalanche photodiodes

A simple empirical model for calculating gain and excess noise in GaAs/Al.XI.Ga1-.XI.As APDs (0.3.LEQ..XI..LEQ.0.6)

Advantages of thin single‐photon avalanche diodes

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