A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism

Abstract

An attempt is made to study the Einstein relation for the diffusivity-mobility ratio (DMR) in nonlinear optical and Optoelectronic compounds on the basis of a newly formulated electron energy spectrum. The results for ternary, III-V and quaternary types of optoelectronic materials form a special case of our generalized investigation. I have also studied the DMR in II-VI, Bi, IV-VI and stressed materials on the basis of various band models as applicable for such focused materials. It has been found taking n-Cd 3 As 2 , n-CdGeAs 2 , n-InAs, n-InSb, n-Hg 1-x Cd x Te, n-In 1-x Ga x As y P 1-y lattice matched to InP, CdS, Bi, PbS, PbTe, PbSe and stressed InSb as examples of the aforementioned compounds that the DMR increases with increasing electron concentration in various manners for different band constants of the said materials and the rates of variation are totally band structure dependent. Now the well-known results for non-degenerate wide gap optical and Optoelectronic materials have been obtained as special cases of our generalized theory under definite limiting background.