A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300°C)

Portmann, L.; Ballan, Hussein; Declercq, M.

doi:10.1109/icsens.2002.1037326

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…Anew, n and respective p, are the electron and hole densities. Indubitably, the electrostatic potential V is the solution of the Poisson equation in (7).…”

Section: Governing Equations For Carrier Transport In Semiconductorsmentioning

confidence: 99%

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SOI Hall cells design selection using three-dimensional physical simulations

Paun

Udrea

2014

Journal of Magnetism and Magnetic Materials

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“…Anew, n and respective p, are the electron and hole densities. Indubitably, the electrostatic potential V is the solution of the Poisson equation in (7).…”

Section: Governing Equations For Carrier Transport In Semiconductorsmentioning

confidence: 99%

“…Papers in literature investigated SOI Hall sensor based solid state meters for power and energy measurements [5,6]. SOI CMOS Hall effect sensor architecture was also used for high temperature applications [7].…”

Section: Introductionmentioning

confidence: 99%

SOI Hall cells design selection using three-dimensional physical simulations

Paun

Udrea

2014

Journal of Magnetism and Magnetic Materials

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“…Several existing studies have investigated the temperature and power performances of SOI Hall sensors via experimental methods [ 8 , 9 ]. Some research has also adopted three-dimensional (3D) physical models to simulate the design optimization of SOI Hall cells [ 10 , 11 , 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations

Fan

et al. 2020

Sensors

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This work investigates the behavior of fully depleted silicon-on-insulator (FD-SOI) Hall sensors with an emphasis on their physical parameters, namely the aspect ratio, doping concentration, and thicknesses. Via 3D-technology computer aided design (TCAD) simulations with a galvanomagnetic transport model, the performances of the Hall voltage, sensitivity, efficiency, offset voltage, and temperature characteristics are evaluated. The optimal structure of the sensor in the simulation has a sensitivity of 86.5 mV/T and an efficiency of 218.9 V/WT at the bias voltage of 5 V. In addition, the effects of bias, such as the gate voltage and substrate voltage, on performance are also simulated and analyzed. Optimal structure and bias design rules are proposed, as are some adjustable trade-offs that can be chosen by designers to meet their own Hall sensor requirements.

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“…Previous works have been concerned with solid state meters based on SOI Hall sensors, for power and energy measurements [5,6]. An architecture based on SOI CMOS Hall effect sensor was used for high temperature applications [7]. SOI Hall cells behaviour was previously investigated by the author through three-dimensional physical models [8,9].…”

Section: Introductionmentioning

confidence: 99%

Investigation into the capabilities of Hall cells integrated in a non-fully depleted SOI CMOS technological process

Paun

Udrea

2016

Sensors and Actuators A: Physical

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The behaviour of SOI Hall cells integrated in a non-fully depleted SOI ("Silicon-On-Insulator") CMOS technology is investigated, with an emphasis on the study of their main parameters. To meet these objectives, a particular optimum structure has been designed, integrated and subsequently analyzed. The performance evaluation of this Hall cells is carried out by means of both a threedimensional physical model and measurements. The Hall voltage, electrostatic potential distribution, space charge and sensitivity have all been evaluated. In addition, the Hall mobility has been studied through simulations. In order to complete the performance assessment of the Hall cells studied, experimental results for the offset and variation of the sensitivity with the temperature are also provided.

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A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300°C)

Cited by 8 publications

References 4 publications

SOI Hall cells design selection using three-dimensional physical simulations

SOI Hall cells design selection using three-dimensional physical simulations

Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations

Investigation into the capabilities of Hall cells integrated in a non-fully depleted SOI CMOS technological process

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