A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors

Zheng, Tao; Sun, Yiming; Han, Lixiang; Yuan, Peng; Zhao, Zhao Qixiao; Zheng, Zhaoqiang; Huo, Nengjie; Gao, Wei; Li, Jingbo

doi:10.1039/d2tc00785a

Cited by 34 publications

(21 citation statements)

References 62 publications

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“…A shift in the transistor threshold voltage could be observed from the upper part of Figure d, indicating that both photoconductive and photogating effects contribute to photocurrent generation . Particularly, the peak R reaches 1.9 × 10 3 A W –1 for near-infrared 980 nm, corresponding to a calculated D of 2.8 × 10 12 Jones (Figure S13 of the Supporting Information), among the highest reported in Te-based photodetectors. ,− Figure f presents partial time-resolved response curves under 980 nm with a switching frequency of 0.1 and 0.2 Hz for ∼280 continuous cycles, revealing a steady photoresponse characteristic. The full I ph – t spectrum and corresponding response time are shown in Figure S14 of the Supporting Information.…”

Section: Resultsmentioning

confidence: 94%

Polarity-Reversible Te/WSe₂ van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Cao

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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As a p-type elemental material with high carrier mobility, superior ambient stability, and anisotropic crystal structure, emerging two-dimensional (2D) tellurium (Te) has been considered a successor to black phosphorus for developing infrared-related optoelectronics. Nevertheless, the lack of a scalable thickness engineering strategy remains an obstacle to unleashing its full potential. Te-based electronics with logic functions are also less explored. Herein, we propose a novel wet-chemical thinning method for 2D Te, with the merits of scalability and site-specific thickness patterning capability. A polarity-switchable van der Waals (vdW) heterodiode with a high rectification ratio of 2.4 × 103 is realized on the basis of Te/WSe2. The electronic application of this unique characteristic is demonstrated by fabricating a logic half-wave rectifier, in which the rectifying states are switchable via electrostatic gating control. Besides, the narrow band gap of Te endows the device with a broad spectral response from visible to short-wave infrared. The room-temperature responsivity reaches 5.2 A W–1 at the telecom wavelength of 1.55 μm, with an external quantum efficiency of 420% and detectivity of 6.8 × 109 Jones. In particular, owing to the intrinsic in-plane anisotropy of Te, the device exhibits a favorable photocurrent anisotropic ratio of ∼3. Our study demonstrates the enormous potential of Te for novel electronics, promoting the development of elemental 2D materials.

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Section: Resultsmentioning

confidence: 94%

Polarity-Reversible Te/WSe₂ van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Cao

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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“…Table 1 compares the device performance with that in the previously reported 2D material‐based photodetectors, implying the superior photovoltaic and photodetection performance of our heterojunction devices. [ 24,30–33 ]…”

Section: Resultsmentioning

confidence: 99%

“…Table 1 compares the device performance with that in the previously reported 2D material-based photodetectors, implying the superior photovoltaic and photodetection performance of our heterojunction devices. [24,[30][31][32][33] Polarization-sensitive photoresponse is a new degree of freedom for extracting the polarization information of light, enabling the photodetection and imaging with higher contrast in a complex environment. [8,34] The prerequisite to realize the polarized light detection is the anisotropic crystal structure and photoabsorption in low-symmetric van der Waals materials such as GeSe, BP, p-Te, ReS 2, and so on.…”

Section: P V Imentioning

confidence: 99%

Polarization‐Resolved p‐Se/n‐WS₂ Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

Gao

Liu

et al. 2022

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Polarization‐sensitive photodetectors based on van der Waals heterojunctions (vdWH) have excellent polarization‐resolved optoelectronic properties that can enable the applications in polarized light identification and imaging. With the development of optical microcomputer control systems (OMCS), it is crucial and energy efficient to adopt the self‐powered and polarization‐resolved signal‐generators to optimize the circuit design of OMCS. In this work, the selenium (Se) flakes with in‐plane anisotropy and p‐type character are grown and incorporated with n‐type tungsten disulfide (WS2) to construct the type‐II vdWH for polarization‐sensitive and self‐powered photodetectors. Under 405 nm monochrome laser with 1.33 mW cm−2 power density, the photovoltaic device exhibits superior photodetection performance with the photoelectric conversion efficiency (PCE) of 3.6%, the responsivity (R) of 196 mA W−1 and the external quantum efficiency (EQE) of about 60%. The strong in‐plane anisotropy of Se crystal structure gives rise to the capability of polarized light detection with anisotropic photocurrent ratio of ≈2.2 under the 405 nm laser (13.71 mW cm−2). Benefiting from the well polarization‐sensitive and photovoltaic properties, the p‐Se/n‐WS2 vdWH is successfully applied in the OMCS as multivalued signal trigger. This work develops the new anisotropic vdWH and demonstrates its feasibility for applications in logic circuits and control systems.

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“…Besides for BP and PdSe 2 , Te has also been used in the development of polarization detectors due to its structural asymmetry, excellent binomial color ratio, and high air stability (42 months). As shown in Figure 8 e, Tao Zheng et al prepared a Te/Si mixed van der Waals heterojunction, which has a large built-in electric field to quickly separate widely-generated carriers and exhibit excellent anisotropy [ 120 ]. Figure 8 f shows photocurrents at different polarization angles, and the photocurrent anisotropy ratio is 2.1 under 635 nm illumination.…”

Section: New Functional Devicementioning

confidence: 99%

“…( d ) Photocurrent of Gr/PdSe 2 /Ge detector as a function of polarization angle at zero bias [ 119 ] (copyright 2019, American Chemical Society). ( e ) Schematic diagram of Te/Si heterojunction detector [ 120 ] (copyright 2022, Royal Society of Chemistry). ( f ) Normalized photocurrent with 635 nm laser at zero bias voltage [ 120 ] (copyright 2022, Royal Society of Chemistry).…”

Section: New Functional Devicementioning

confidence: 99%

Infrared Photodetection from 2D/3D van der Waals Heterostructures

Tang

Zhong

et al. 2023

Nanomaterials

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An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.

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A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors

Abstract: Monoelemental two-dimensional (2D) Tellurium (Te) has demonstrated excellent potential candidate for next-generation (opto)electronic devices due to its unique properties such as topological surface states, high carrier mobility, high light absorption...

Cited by 34 publications

References 62 publications

Polarity-Reversible Te/WSe₂ van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Polarity-Reversible Te/WSe₂ van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Polarization‐Resolved p‐Se/n‐WS₂ Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

Infrared Photodetection from 2D/3D van der Waals Heterostructures

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A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors

Abstract: Monoelemental two-dimensional (2D) Tellurium (Te) has demonstrated excellent potential candidate for next-generation (opto)electronic devices due to its unique properties such as topological surface states, high carrier mobility, high light absorption...

Cited by 34 publications

References 62 publications

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Polarization‐Resolved p‐Se/n‐WS2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

Infrared Photodetection from 2D/3D van der Waals Heterostructures

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Polarity-Reversible Te/WSe₂ van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Polarity-Reversible Te/WSe₂ van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Polarization‐Resolved p‐Se/n‐WS₂ Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger