A study of sensing properties of Pt- and Au-loaded In2O3 ceramics

Romanovskaya, V. V.; Ivanovskaya, M. I.; Bogdanov, P

doi:10.1016/s0925-4005(99)00018-0

Cited by 61 publications

(33 citation statements)

References 10 publications

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“…For example, for In 2 O 3 :Ga-based sensors during H 2 detection the doping was accompanied by the power change from 130 mW to 180 mW, while for In 2 O 3 :P sensors the power dissipated in the maximum of sensor response has been changing from 130 mW to 260 mW. The same effect was also observed in [11] for In 2 O 3 :Ga-based sensors during detection of CH 4 . An increase of Ga-oxide concentration was being accompanied by the shift of the maximum sensitivity to methane from 400 1C (0% Ga 2 O 3 ) to 520 1C (20% Ga 2 O 3 ).…”

Section: Resultsmentioning

confidence: 65%

“…Features of oneelectrode gas sensors are discussed in details in [3]. At the present, metal oxides such as SnO 2 , In 2 O 3 , WO 3 and ZnO were tested for the one-electrode gas sensors design [4]. However, experiment has shown that In 2 O 3 , due to specific electrophysical properties, is the most promising material for such application [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…At the present, metal oxides such as SnO 2 , In 2 O 3 , WO 3 and ZnO were tested for the one-electrode gas sensors design [4]. However, experiment has shown that In 2 O 3 , due to specific electrophysical properties, is the most promising material for such application [3][4][5]. The most studied metal oxide SnO 2 [6] is not the optimal material for oneelectrode gas sensor design due to much higher resistance [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

In2O3:Ga and In2O3:P-based one-electrode gas sensors: Comparative study

Boris

Brînzari

Han

et al. 2015

Ceramics International

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Section: Resultsmentioning

confidence: 65%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

In2O3:Ga and In2O3:P-based one-electrode gas sensors: Comparative study

Boris

Brînzari

Han

et al. 2015

Ceramics International

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“…Doped with Pt 4+ or Au 3+ it becomes NH 3 sensitive. 4,5 In most applications the production of thin ITO films is necessary. For this purpose common methods of layer deposition such as evaporation of In 2 O 3 and SnO 2 powders [6][7][8][9][10][11][12] and ͑magnetron͒ dc-and rf-sputtering 2,[13][14][15][16][17][18][19] spray pyrolysis 1,5,20 are widely used.…”

Section: Introductionmentioning

confidence: 99%

“…45 Application-oriented works repeatedly reported the occurrence of metallic indium in different ITO layers. 4,10,[46][47][48] This formation is usually driven by strongly reducing conditions such as plasma-enhanced chemical-vapor deposition ͑PECVD͒, 39,49 ultrahigh vacuum ͑UHV͒, 5,12 and hydrogen gas 38 or acids in wet chemistry. 40,41 But also the neutrondiffraction study of González et al mentioned the occurrence of metallic indium after a reduction with the forming gas.…”

Section: Introductionmentioning

confidence: 99%

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Günther¹,

Schierning²,

Theissmann³

et al. 2008

Journal of Applied Physics

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The correlation between defect structure, metal segregation, and electrical resistivity of indium-tin-oxide nanopowder upon treatment in reducing atmosphere was investigated. Morphology and defect structure have been investigated by in situ synchrotron x-ray diffraction and transmission electron microscopy, while traces of metallic indium have been detected by susceptibility measurements utilizing the superconducting properties of indium. With increasing treatment temperature under reforming gas the film resistivity decreases down to = 1.6 ϫ 10 −2 ⍀ cm at 330°C annealing temperature. For even higher treatment temperatures, the resistivity increases further. This is accompanied by extractions of metallic indium. Under forming gas, grain growth could be observed at 350°C, while in air grain growth starts at 650°C. Furthermore forming gas causes a lattice expansion of ITO which persists in oxygen, at least for several hours. The results are discussed with respect to results published in the literature.

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Dilution‐Induced Self‐Assembly PEDOT:PSS Interlayer Enables Low‐Noise Near‐Infrared Organic Photodetectors for High‐Contrast Imaging

Xu,

Miao,

Eisner

et al. 2023

Advanced Optical Materials

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Poly(3,4‐ethylenedioxythiphene):poly(styrene sulfonate) (PEDOT:PSS) is widely used as hole transport layer in photodiodes due to its deep work function, flexibility, low cost, and commercialization potentials. However, organic photodetectors (OPDs) using commercial PEDOT:PSS (C‐PEDOT:PSS) interlayers usually suffer from high noise currents. Here, a simple dilution‐induced strategy is proposed for constructing an ultrathin self‐assembled PEDOD:PSS layer (D‐PEDOT:PSS). Dilution‐induced chain disentanglement leads to smaller grain sizes, which is beneficial to reduce defects and enhances selective charge transport. This enables the fabrication of near‐infrared PM6:Y6 organic photodetectors with three orders of magnitude lower ultra‐low dark current (<1.5×10−10 A cm−2) and one order of magnitude lower spectral‐noise density (2.1×10−14 A Hz−1/2) compared to devices using untreated PEDOT:PSS, at ‐0.1 V applied bias. With low dark current and enhanced responsivity, the shot‐noise‐limited detectivity increases by 35 times. An imaging system using OPDs as a sensing pixel has achieved high‐contrast images, demonstrating the imaging potential of the OPDs. The universality of this strategy to enhance the performance of OPDs is further demonstrated through three additional donor‐acceptor blends. This study presents a simple and effective strategy to reduce the noise current of PEDOT:PSS‐based OPDs and provides insights into the correlation between interfacial properties and the performance of OPDs.

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A study of sensing properties of Pt- and Au-loaded In2O3 ceramics

Cited by 61 publications

References 10 publications

In2O3:Ga and In2O3:P-based one-electrode gas sensors: Comparative study

In2O3:Ga and In2O3:P-based one-electrode gas sensors: Comparative study

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Dilution‐Induced Self‐Assembly PEDOT:PSS Interlayer Enables Low‐Noise Near‐Infrared Organic Photodetectors for High‐Contrast Imaging

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