A study of the optical and thermal properties of nonlinear mercury thiogallate crystals

Badikov, V. V.; Kuzmin, N.; Laptev, V. B.; Malinovsky, A.; Mitin, K. V.; Nazarov, Gennadii S; Ryabov, E. A.; Seryogin, A. M.; Schebetova, N.

doi:10.1070/qe2004v034n05abeh002702

Cited by 31 publications

(21 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the good nonlinear properties and the optical quality of HgGa 2 S 4 crystal allow this material to compete with AgGaS 2 , AgGaSe 2 , ZnGeP 2, and GaSe crystals. 10 Despite the strong interest in the characterization of the properties of HgGa 2 S 4 , there is no study, to our knowledge, of its properties at high pressures probably due to the difficulties found in growing these crystals. 11 On the contrary, there are several measurements of the physical properties of other sulfide-based OVCs (ZnGa 2 S 4 , CdGa 2 S 4 , CdAl 2 S 4 , and HgAl 2 S 4 ) under pressure.…”

Section: VImentioning

confidence: 99%

Vibrational study of HgGa2S4 under high pressure

Vilaplana

Robledillo

Gomis

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Stimulated crystallization of melt-quenched Ge2Sb2Te5 films employing femtosecond laser double pulses J. Appl. Phys. 112, 123520 (2012) Controlled joining of Ag nanoparticles with femtosecond laser radiation J. Appl. Phys. 112, 123519 (2012) Structural, elastic, and vibrational properties of layered titanium dichalcogenides: A van der Waals density functional study J. Chem. Phys. 137, 224509 (2012) Additional information on J. Appl. Phys. In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa 2 S 4 ) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our measurements evidence that this semiconductor exhibits a pressure-induced phase transition from the completely ordered defect chalcopyrite structure to a partially disordered defect stannite structure above 18 GPa which is prior to the transition to the completely disordered rocksalt phase above 23 GPa. Furthermore, a completely disordered zincblende phase is observed below 5 GPa after decreasing pressure from 25 GPa. The disordered zincblende phase undergoes a reversible pressure-induced phase transition to the disordered rocksalt phase above 18 GPa. The sequence of phase transitions here reported for HgGa 2 S 4 evidence the existence of an intermediate phase with partial cation-vacancy disorder between the ordered defect chalcopyrite and the disordered rocksalt phases and the irreversibility of the pressure-induced orderdisorder processes occurring in ordered-vacancy compounds. The pressure dependence of the Raman modes of all phases, except the Raman-inactive disordered rocksalt phase, have been measured and discussed.

show abstract

Section: VImentioning

confidence: 99%

Vibrational study of HgGa2S4 under high pressure

Vilaplana

Robledillo

Gomis

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Figure 2a shows a comparison of the experimental OPO tuning with calculations based on the Sellmeier equations for HGS that gave the best agreement [6]. Even not far above threshold the idler tuning range extended from ~4.5 to above 9 µm.…”

Section: Resultsmentioning

confidence: 90%

High-energy 1064-nm pumped optical parametric oscillator for the 6 µm spectral range based on HgGa2S4

Esteban-Martín

Marchev

Badikov

et al. 2013

Advanced Solid-State Lasers Congress

View full text Add to dashboard Cite

show abstract

“…100 Hz with a slightly lengthened (21 mm) cavity, with calculations based on the Sellmeier equations for HGS that gave the best agreement [4]. The idler tuning range for the given crystal cut extends from below 3 to above 8 μm.…”

Section: Laser and Photonics Reviewsmentioning

confidence: 99%

High-power HgGa₂S₄optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

Tyazhev

Marchev

Badikov

et al. 2013

Laser & Photonics Reviews

View full text Add to dashboard Cite

The defect chalcopyrite crystal HgGa 2 S 4 has been employed in a 1064-nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 μm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS 2 crystal, operation of the 1064-nm pumped HgGa 2 S 4 OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold.

show abstract

A study of the optical and thermal properties of nonlinear mercury thiogallate crystals

Cited by 31 publications

References 17 publications

Vibrational study of HgGa2S4 under high pressure

Vibrational study of HgGa2S4 under high pressure

High-energy 1064-nm pumped optical parametric oscillator for the 6 µm spectral range based on HgGa2S4

High-power HgGa₂S₄optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

Contact Info

Product

Resources

About

A study of the optical and thermal properties of nonlinear mercury thiogallate crystals

Cited by 31 publications

References 17 publications

Vibrational study of HgGa2S4 under high pressure

Vibrational study of HgGa2S4 under high pressure

High-energy 1064-nm pumped optical parametric oscillator for the 6 µm spectral range based on HgGa2S4

High-power HgGa2S4optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

Contact Info

Product

Resources

About

High-power HgGa₂S₄optical parametric oscillator pumped at 1064 nm and operating at 100 Hz