2022
DOI: 10.3390/nano12213919
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A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

Abstract: Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and m… Show more

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Cited by 8 publications
(1 citation statement)
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“…Due to expansion and compression, the cavitation bubbles collapsed at their threshold volume, releasing particles into the liquid. These ligand-free reactive nanomaterials have the ability to develop a wide range of unique nanomaterials with a number of various geometries [44][45][46][47]. Irradiating a solution that already contains a broad range of nanoparticles with a pulsed laser results in the fragmentation of the nanoparticles, as well as the potential formation of alloyed NPs.…”
Section: Proposed Synthesis Mechanism Of Npsmentioning
confidence: 99%
“…Due to expansion and compression, the cavitation bubbles collapsed at their threshold volume, releasing particles into the liquid. These ligand-free reactive nanomaterials have the ability to develop a wide range of unique nanomaterials with a number of various geometries [44][45][46][47]. Irradiating a solution that already contains a broad range of nanoparticles with a pulsed laser results in the fragmentation of the nanoparticles, as well as the potential formation of alloyed NPs.…”
Section: Proposed Synthesis Mechanism Of Npsmentioning
confidence: 99%