2023
DOI: 10.1016/j.solener.2023.111898
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A study on Cr incorporation to enhance performance of CZTSSe solar cells via optimizing selenization condition

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Cited by 7 publications
(6 citation statements)
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“…This chemical shift may overlap with the relative position shift of the Fermi level in the surface band gap (Δ E F = E F – E V ), possibly related to the enhancement of the selenidation level. 37–39 This confirms that the addition of indium nitrate has improved the selenization rate and also brought an increase in Se content in the surface. Fig.…”
Section: Resultssupporting
confidence: 58%
“…This chemical shift may overlap with the relative position shift of the Fermi level in the surface band gap (Δ E F = E F – E V ), possibly related to the enhancement of the selenidation level. 37–39 This confirms that the addition of indium nitrate has improved the selenization rate and also brought an increase in Se content in the surface. Fig.…”
Section: Resultssupporting
confidence: 58%
“…Also, Zhang et al had theoretically studied the structural, electronic, and optical properties of compounds by varying both cation (Si) and anion (S, Se, and Te) of Cu 2 ZnSiS 4 , Cu 2 ZnSiSe 4 , and Cu 2 ZnSiTe 4 . DFT study regarding the replacement of Zn with Cr, Ti, and V, and doping of Sn with Mo that resulted in compounds such as Cu 2 CrSnS 4 , Cu 2 TiSnS 4 , Cu 2 VSnS 4 , and Cu 2 Zn­(Sn x , Mo 1– x ) S 4 was reported by Kistanov et al Experimentally, the Cu 2 CrSnS 4 thin film was fabricated recently using the solution processing technique . It was observed that the addition of Cr suppressed the defect levels of Cu Zn and [2Cu Zn + Sn Zn ] in the absorber.…”
Section: Challenges and Perspectivesmentioning
confidence: 97%
“…DFT study regarding the replacement of Zn with Cr, Ti, and V, and doping of Sn with Mo that resulted in compounds such as Cu 2 CrSnS 4 , Cu 2 TiSnS 4 , Cu 2 VSnS 4 , and Cu 2 Zn(Sn x , Mo 1−x ) S 4 was reported by Kistanov et al 113 Experimentally, the Cu 2 CrSnS 4 thin film was fabricated recently using the solution processing technique. 114 It was observed that the addition of Cr suppressed the defect levels of Cu Zn and [2Cu Zn + Sn Zn ] in the absorber. The quality of the front and back interfaces of CCZTS films was enhanced due to the improved microstructure of the films.…”
Section: Challenges and Perspectivesmentioning
confidence: 99%
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