2021
DOI: 10.1166/jno.2021.3005
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A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop

Abstract: Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off … Show more

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