A Sub-nW, 8T Current Reference Consuming Constant Power w.r.t Process &amp; Temperature

Ali, Amin Ahsan; Pullela, Abhishek; Jain, Arpan; Abbas, Zia

doi:10.1109/mwscas48704.2020.9184679

Cited by 9 publications

(1 citation statement)

References 12 publications

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“…These thin oxide devices are also known as gate-leakage transistors, as tunneling currents of the order of fA to pA flow through the gate of these devices [13]. They can serve as effective replacements for GΩ physical resistances due to their compact size and provision of sub-nA currents [14]- [16]. A single stage differential amplifier (with 52dB open loop gain) has been used to ensure the negative feedback in the loop (shown in Fig.…”

Section: Design and Analysis Of The Temperature Sensormentioning

confidence: 99%

A 419pW Process-Invariant Temperature Sensor for Ultra-Low Power Microsystems

Pullela

Ali

Jain

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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The paper presents a sub-nW BJT based temperature sensor for ultra-low power microsystems. The sensor is based on amplifying the difference between baseemitter voltages of BJTs using gate-leakage transistors. Implemented in UMC 65nm technology, the sensor occupies an area of 0.005mm 2 . It achieves a maximum non-linearity error of 0.12 o C(3σ) over the temperature range of −55 o C to 80 o C. Without any trimming, a worst case inaccuracy of +0.36 o C/ − 1.61 o C is observed w.r.t process variations, depicting the process-invariant nature of the temperature sensor. It also achieves a low supply sensitivity of 0.56 o C/V over a wide supply range of 0.7V-3V. The power consumption of the sensor is 419pW at 27 o C and 0.7V supply.

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Section: Design and Analysis Of The Temperature Sensormentioning

confidence: 99%