1986
DOI: 10.1109/jssc.1986.1052619
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A subnanosecond HEMT 1-kbit static RAM

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Cited by 4 publications
(1 citation statement)
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“…Nishiuchi et al [136] SRAM using 1.5-/zm gate length SDHTs. The fabrication of this almost 10,000-transistor circuit represents a major step forward in SDHT technology.…”
Section: Sdht Static Ram Circuitsmentioning
confidence: 99%
“…Nishiuchi et al [136] SRAM using 1.5-/zm gate length SDHTs. The fabrication of this almost 10,000-transistor circuit represents a major step forward in SDHT technology.…”
Section: Sdht Static Ram Circuitsmentioning
confidence: 99%