A Supply Voltage Insensitive Two-Transistor Temperature Sensor With PTAT/CTAT Outputs Based on Monolithic GaN Integrated Circuits

Li, Ang; Li, Fan; Chen, Kaiwen; Zhu, Yuhao; Wang, Weisheng; Mitrovic, Ivona Z.; Wen, Huiqing; Liu, Wen

doi:10.1109/tpel.2023.3288937

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2024

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Cited by 5 publications

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Molybdenum-14Rhenium alloy—The most promising candidate for high-temperature semiconductor substrate materials

Zhang,

Zhao,

Lin

et al. 2024

Journal of Alloys and Compounds

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Molybdenum-14Rhenium alloy—The most promising candidate for high-temperature semiconductor substrate materials

Zhang,

Zhao,

Lin

et al. 2024

Journal of Alloys and Compounds

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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Xie,

Niroula,

Rajput

et al. 2024

Applied Physics Letters

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This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

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Au-Free Multi-Layer Ti/Al Ohmic Contacts for AlGaN/GaN HEMTs

Wang,

Zhang,

Feng

et al. 2024

2024 IEEE International Conference on IC Design and Technology (ICICDT)

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A Supply Voltage Insensitive Two-Transistor Temperature Sensor With PTAT/CTAT Outputs Based on Monolithic GaN Integrated Circuits

Cited by 5 publications

References 17 publications

Molybdenum-14Rhenium alloy—The most promising candidate for high-temperature semiconductor substrate materials

Molybdenum-14Rhenium alloy—The most promising candidate for high-temperature semiconductor substrate materials

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Au-Free Multi-Layer Ti/Al Ohmic Contacts for AlGaN/GaN HEMTs

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