A Technique for Enhancing Varactor’s Quality Factor in Millimeter-Wave Frequencies

Ghorbani-Nejad, Aboozar; Nabavi, Abdolreza

doi:10.1109/tcsii.2016.2611521

Cited by 4 publications

(3 citation statements)

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“…For the convenience of analysis, the equivalent circuit of the interconnection metal line was simplified to parasitic resistance and inductance. The quality factor of the LC tank can be expressed as follows [15,16]:…”

Section: Quality Factor Of the Lc Tank With Mos Varactormentioning

confidence: 99%

“…Here, CSUB and RSUB in Figure 2c were ignored in the equations for the convenience of analysis. As can be seen in the analyzed QLC, the metal line for the two MOS varactors The quality factor of the LC tank can be expressed as follows [15,16]:…”

Section: Quality Factor Of the Lc Tank With Mos Varactormentioning

confidence: 99%

“…Many extant studies have attempted to minimize the parasitic resistance induced by the spiral inductor of the LC tank to improve the phase noise of the VCO. Although the parasitic resistance induced by the spiral inductor degrades the phase noise of the VCO the most significantly, the low quality factor of the MOS varactor that is essential in the VCO also degrades the phase noise of the VCO significantly [14,15]. Moreover, given the channel resistance and complicated structure of the MOS varactor, the varactor itself has a relatively low quality factor compared to the metal-insulator-metal (MIM) capacitor.…”

Section: Introductionmentioning

confidence: 99%

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Layout of MOS Varactor with Improved Quality Factor for Cross-Coupled Differential Voltage-Controlled Oscillator Applications

Lee

Park

2023

Electronics

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In this study, we designed an MOS varactor for application in the differential voltage-controlled oscillator (VCO). To improve the quality factor of the MOS varactor, we proposed a symmetric layout technique of the MOS varactor with reduced parasitic components. Compared with the typical MOS varactor layout, the metal line for the interconnection of the MOS varactors that is inevitable in the typical MOS varactors for the cross-coupled VCO was minimized to reduce the parasitic resistance. In addition, with the reduced interconnection metal line, the overall size of the proposed MOS varactor was also reduced compared with the typical one. To verify the feasibility of the proposed MOS varactor structure, the typical and proposed MOS varactors were designed using a 180 nm RFCMOS process. Compared to the typical MOS varactor, the measured quality factor of the proposed MOS varactor was improved by approximately 32% at the operating frequency of 5.0 GHz. Additionally, we successfully verified that the parasitic capacitance induced by the lossy silicon substrate was reduced in the proposed MOS varactor structure.

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Section: Quality Factor Of the Lc Tank With Mos Varactormentioning

confidence: 99%

Section: Quality Factor Of the Lc Tank With Mos Varactormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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