2021
DOI: 10.51408/1963-0069
|View full text |Cite
|
Sign up to set email alerts
|

A Theorem on Even Pancyclic Bipartite Digraphs

Abstract: Magnetic random-access memory (MRAM) is one of the emerging memory technologies, which can be considered as the next universal memory because of its good parameters. Nevertheless, this type of memory is not guaranteed from defects and it is very important to understand the fault typology and develop a test solution that addresses these faults. In this paper a Built-in Self-Test (BIST) solution is presented,which is specifically tailored for MRAMs and efficiently deals with MRAM specific faults.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 5 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?