A Theoretical Study of Interband Absorption Spectra of Spherical Sector Quantum Dots under the Effect of a Powerful Resonant Laser

Abstract

We explore the variation of interband absorption spectra of GaAs spherical sector quantum dots (QDs) in response to a strong resonant laser, using the renormalized wave function method. Even though a spherical sector QD appears identical to a section cut from a spherical QD, it contains a controllable additional spatial parameter, the apical angle, which results in radically different wave functions and energy levels of particles, and is anticipated to exhibit novel optical properties. The obtained findings reveal that the apical angle of the dot has a considerable effect on the interband absorption spectrum. With the increase in the dot apical angle, a significant redshift of the interband absorption peaks has been identified. Increasing the pump laser detuning and dot radius yields similar results. Especially when a powerful resonant laser with tiny detuning is utilized, a dynamical coupling between electron levels arises, resulting in the formation of new interband absorption peaks. These new peaks and the former ones were similarly influenced by the aforementioned parameters. Furthermore, it is thought that the new peaks, when stimulated by a suitable laser, will produce the entangled states necessary for quantum information.

Semiconductor Quantum Wells and Nanostructures

“…The coherence properties of a single heavy-hole spin qubit on the basis of a double GaAs/AlGaAs quantum dot are studied in a captivating paper [ 5 ]. An entire series of articles [ 6 , 7 , 8 , 9 , 10 ] is presented by the group of prof. C. Duque from University of Antioquia (Columbia). It clearly demonstrates that computer modeling of the dispersion and optical response of semiconductor quantum wells and nanostructures provides a wide field for such kind of activity.…”