A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

Abstract

The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al,Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.

The nonlinear optical properties of self-assembled InAs/GaAs quantum dot under effect of temperature and hydrostatic pressure

“…The quantum confinement that occurs the low dimensional system, quantum well [1,2], quantum wire [3] and QDs [4] exhibited new properties, especially the QD that has natural atomic-like discrete energy levels . Their physical properties can be controlled and adjusted by changing their size and composition, in addition to a variety of shapes which can be approximated as spherical [5,6], ring [7], cubic [8,9], cylindrical [10,11], pyramid [12] and ellipsoidal [13].…”