A Theoretical Study on Thermo-Analytical Techniques in Differential Scanning Calorimetry. Application to the Crystallization of the Semiconducting Sb0.12As0.40Se0.48Alloy

Abstract

A procedure has been developed for analyzing the evolution with time of the volume fraction crystallized and for calculating the kinetic parameters at non‐isothermal reactions in materials involving formation and growth of nuclei. Considering the assumptions of extended volume and random nucleation, a general expression of the fraction crystallized as a function of time has been obtained in isothermal crystallization process. The application of the crystallization rate to the non‐isothermal processes has been carried out under the restriction of a nucleation which takes place early in the transformation and the nucleation frequency is zero thereafter. Under these conditions, the kinetic parameters have been deduced by using the techniques of data analysis of single‐scan and multiple‐scan. The theoretical method developed has been applied to the crystallization kinetics of the semiconducting Sb0.12As0.40Se0.48 alloy. The kinetic parameters obtained according to both techniques differ by only about 6%, which confirms the reliability and accuracy of the single‐scan technique when calculating the above‐mentioned parameters in non‐isothermal crystallization processes.