A Two-Port SRAM Cell with Improved Write-Ability and Reduced Leakage Current for Signal Processing Applications

Yu, Cheng‐Chieh; Shiau, Ming-Chuen; Wu, Chung-Bin

doi:10.1109/iccc47050.2019.9064269

2019 IEEE 5th International Conference on Computer and Communications (ICCC) 2019

DOI: 10.1109/iccc47050.2019.9064269

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A Two-Port SRAM Cell with Improved Write-Ability and Reduced Leakage Current for Signal Processing Applications

Cheng‐Chieh Yu

Ming-Chuen Shiau

Chung-Bin Wu

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A Two-Port SRAM Cell with Improved Write-Ability and Reduced Leakage Current for Signal Processing Applications

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References 19 publications

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