IEEE Trans. VLSI Syst.
 2016
DOI: 10.1109/tvlsi.2015.2469596
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A Variation-Tolerant Replica-Based Reference-Generation Technique for Single-Ended Sensing in Wide Voltage-Range SRAMs

Viveka Konandur Rajanna
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Bharadwaj Amrutur
2
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Cited by 6 publications
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References 34 publications
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A Design of Highly Stable and Low-Power SRAM Cell

Upadhyay
1
,
Kar
2
,
Mandal
3
et al. 2018
Advances in Intelligent Systems and Computing
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A Design of Highly Stable and Low-Power SRAM Cell

Upadhyay
1
,
Kar
2
,
Mandal
3
et al. 2018
Advances in Intelligent Systems and Computing
5
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0
0
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A Novel 8T SRAM Cell with Low Swing Voltage for Portable Devices

Upadhyay
1
,
Sharma
2
,
Kar
3
et al. 2018
2018 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technolo
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A closed-form energy model for VLSI circuits under wide voltage scaling

Jain
1
,
Alioto
2
2016
2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)
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