A Wide Tuning-Range CMOS VCO with a Tunable Active Inductor

Kao, Hsuan‐Ling; Lee, Ping-Che; Chiu, Hsien‐Chin

doi:10.1155/2015/382483

Cited by 11 publications

(4 citation statements)

References 18 publications

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“…components and their values were selected appropriately. In the literature, there are also other active inductor analyses and design studies [11][12][13][14]. Low noise amplifier (LNA) designs were demonstrated for TSMC 65 nm technology node in the literature [15,16].…”

Section: Methodsmentioning

confidence: 99%

Ayarlanabi̇li̇r Radyo Frekans (Rf) Alici (Rx) Entegre Devre (Ic)

Kazancı¹,

ORAL>

2023

International Journal of Engineering and Innovative Research

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In this work tunable radio frequency (RF) receiver (Rx) integrated circuit (IC) was demonstrated. TSMC 65 nm technology node was selected to implement IC. RF technique has some advantages over biomedical optic molecule investigation methods since it is easy to design, implement. Experimental measurement on live tissue is much easier than optic methods. Nanoscopic creatures have specific binding structures. Their elements construct their shapes and neighborhood conformation between their own atoms. Based on this work differential RF waves will be used to investigate the nanoscopic creatures. Since the investigation of nanoscopic creatures will require to use electromagnetic wave phase shift and scan of different RF frequencies, ultra-wide band (UWB) tunable receiver circuit topology was designed and simulated. For this purpose, Rx block was designed, and simulation work was demonstrated here. In the circuit simulations, off-chip antenna was connected to the low-noise amplifier (LNA) circuit. Specific frequency was around 30 GHz. Frequency tuning was adjusted by changing the source and bias voltages at the active inductor voltage-controlled oscillator (VCO) circuit block. The same VCO block was also used at the Tx circuit before. Antenna signal was modeled by using 33 GHz alternative sinusoidal signal. Antenna signal and 30 GHz active-inductor VCO voltage output were mixed at the mixer circuit block, 3 GHz envelope signal was extracted in this work. Layout implementation of Rx receiver IC was demonstrated.

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Section: Methodsmentioning

confidence: 99%

Ayarlanabi̇li̇r Radyo Frekans (Rf) Alici (Rx) Entegre Devre (Ic)

Kazancı¹,

ORAL>

2023

International Journal of Engineering and Innovative Research

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“…Figure 1A shows the regulated cascode AI, and Figure 1B illustrates the equivalent small‐signal model of regulated cascode AI 11 . Figure 1C represents the final equivalent circuit of AI.…”

Section: Ai Lc Vco and Bpfmentioning

confidence: 99%

“…Having studied the prior works in the relevant field, several researchers' contributions can be mentioned. Kao et al 11 had proposed a tunable AI based CMOS VCO having 169% tuning range (0.6 ∼ 7.2 GHz) in 0.18 μm CMOS technology. Both inductors and varactors are exploited to achieve frequency tuning.…”

Section: Introductionmentioning

confidence: 99%

Tunable active inductor based VCO and BPF in a single integrated design for wireless applications in 90 nm CMOS process

Faruqe

Lim²,

Amin³

2020

Engineering Reports

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This article proposes a tunable active inductor (AI)‐based voltage‐controlled oscillator (VCO) andbandpass filters (BPF) on a single integrated design in 90 nm CMOS process for wireless applications. By exploiting component sharing technique through single pole double throws switching method, a common AI is shared between VCO and BPFs. As the passive inductor is replaced by the AI and shared, silicon area consumption is significantly reduced. Transforming the inductor in tunable mode benefits to eliminate MOS varactors for tuning purposes; one step forward to reduce silicon area consumption. Operating as VCO, its frequency ranges from 1.93 to 6.22 GHz (tuning scope is 105%) for tuning voltage of 0.2 ∼ 1 V. The DC power consumption varies from 1.83 to 3.84 mW, and differential output power is 3.39 to − 2.99 dBm. The phase noise varies from − 81.32 to − 76.89 dBc/Hz, and the figure of merit has a value of − 148.74 dBc/Hz at 5.03 GHz frequency. While acting as BPF, two approaches of center frequency tuning are applied. The voltage tuning yields center frequency of 8.43 ∼ 7.08 GHz along with the maximum gain of 10.29 dB at 7.81 GHz. The capacitive tuning outputs frequency tuning of 7.64 ∼ 7.06 GHz. The BPF consumes DC power of 2.56 to 2.27 mW (voltage tuning) and 2.40 mW (capacitive tuning). The proposed design occupies a layout area of 1215.6 μm2. All the simulations have been performed considering parasitic elements evolved from the extraction of layout. Finally, a quantitative comparison and justification of the proposed design are made with respect to other published works.

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“…Several active inductors have been proposed [4,[9][10][11][12][13][14][15][16][17][18]. Most are designed on the basis of the gyrator-C topology: (1) single-ended active inductors [9][10][11][12][13] and (2) differential active inductors [14][15][16][17]. A lossy single-ended gyrator-C active inductor is presented in Figure 5 to demonstrate how its structure performs an inductive function without use of any spiral inductors.…”

Section: Tunable Active Inductor In Bpfmentioning

confidence: 99%

Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

Wang

Chen

2017

VLSI Design

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A classic second-order coupled-capacitor Chebyshev bandpass filter using resonator of tunable active capacitor and inductor is presented. The low cost and small size of CMOS active components make the bandpass filter (BPF) attractive in fully integrated CMOS applications. The tunable active capacitor is designed to compensate active inductor's resistance for resistive match in the resonator. In many design cases, more than 95% resistive loss is cancelled. Meanwhile, adjusting design parameter of the active component provides BPF tunability in center frequency, pass band, and pass band gain. Designed in 1.8 V 180 nanometer CMOS process, the BPF has a tuning frequency range of 758-864 MHz, a controllable pass band of 7.1-65.9 MHz, a quality factor of 12-107, a pass band gain of 6.5-18.1 dB, and a stopband rejection of 38-50 dB.

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A Wide Tuning-Range CMOS VCO with a Tunable Active Inductor

Cited by 11 publications

References 18 publications

Ayarlanabi̇li̇r Radyo Frekans (Rf) Alici (Rx) Entegre Devre (Ic)

Ayarlanabi̇li̇r Radyo Frekans (Rf) Alici (Rx) Entegre Devre (Ic)

Tunable active inductor based VCO and BPF in a single integrated design for wireless applications in 90 nm CMOS process

Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

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