A Wide Tuning Range, Low Phase Noise, and Area Efficient Dual-Band Millimeter-Wave CMOS VCO Based on Switching Cores

Basaligheh, Ali; Saffari, Parvaneh; Winkler, Wolfgang; Moez, Kambiz

doi:10.1109/tcsi.2019.2901253

Cited by 32 publications

(11 citation statements)

References 34 publications

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“…Nevertheless, at the state of the art, dual-band operation is typically achieved by means of LC VCOs with switched components, such as switched capacitor (SC) [16], switched inductor (SL) [17], or switched core [18], as schematically shown in Fig. 6(a)-(c), respectively.…”

Section: A Vco Designmentioning

confidence: 99%

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

Papotto

Parisi

Finocchiaro

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents a 77-GHz transmitter (TX) in a 28-nm fully depleted silicon-on-insulator CMOS technology for automotive radar applications. The circuit has been designed to simultaneously fulfill both short-/medium-range (S/MR) and long-range (LR) operations. It exploits an LO frequency doubling architecture, which allows preventing voltage-controlled oscillator (VCO) pulling effects for improved phase noise (PN) performance. The proposed TX comprises a 38-GHz VCO driving a frequency doubler and then a current-combining two-path power amplifier. The VCO takes advantage of a novel tank architecture to cope S/MR and LR requirements with an effective and silicon area-saving solution. The proposed TX also features a feedback loop that allows properly setting the power delivered to the output load. It exhibits a 5-GHz bandwidth, ranging from 76 to 81 GHz, with a PN performance as low as −93 dBc/Hz at a 1-MHz offset frequency from a 77-GHz carrier. It is also able to deliver a maximum output power as high as 17.5 dBm with a dynamic control range of around 13 dB. The overall power consumption is 351 mW.

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Section: A Vco Designmentioning

confidence: 99%

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

Papotto

Parisi

Finocchiaro

et al. 2023

IEEE Trans. Microwave Theory Techn.

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“…Owing to the higher phase noise performance, LC-tank VCOs with spiral inductors and varactors are extensively adopted in radio frequency circuit implementations [21]. Theoretically, the VCO tuning range is determined by the maximum to minimum capacitance ratio of the varactor [22,23]. The tuning range of an LC-tank VCO is approximately restricted for a classical capacitance ratio in a typical CMOS process, rendering it unsuitable for wideband applications.…”

Section: Literature Reviewmentioning

confidence: 99%

A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

Behera

Siddique

Delwar

et al. 2022

Sensors

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The inductor was primarily developed on a low-voltage CMOS tunable active inductor (CTAI) for radar applications. Technically, the factors to be considered for VCO design are power consumption, low silicon area, high frequency with reasonable phase noise, an immense quality (Q) factor, and a large frequency tuning range (FTR). We used CMOS tunable active inductor (TAI) topology relying on cascode methodology for 24 GHz frequency operation. The newly configured TAI adopts the additive capacitor (Cad) with the cascode approach, and in the subthreshold region, one of the transistors functions as the TAI. The study, simulations, and measurements were performed using 65nm CMOS technology. The assembled circuit yields a spectrum from 21.79 to 29.92 GHz output frequency that enables sustainable platforms for K-band and Ka-band operations. The proposed design of TAI demonstrates a maximum Q-factor of 6825, and desirable phase noise variations of −112.43 and −133.27 dBc/Hz at 1 and 10 MHz offset frequencies for the VCO, respectively. Further, it includes enhanced power consumption that varies from 12.61 to 23.12 mW and a noise figure (NF) of 3.28 dB for a 24 GHz radar application under a low supply voltage of 0.9 V.

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“…Usually, the voltage-controlled oscillator (VCO) and the millimeter-wave frequency divider need to work in high frequencies and a wide band. Recently, some wideband VCOs [9,10,11] and multi-mode VCOs [12,13,14,15,16,17] have been demonstrated with ultra-wide tuning bands. For example, [9] exhibits a wideband VCO with a 39.5% relative tuning range.…”

Section: Introductionmentioning

confidence: 99%

An ultra-wideband injection-locked frequency divider with a multi-order resonator and the passive injection-boosted technique

Cheng

et al. 2022

IEICE Electron. Express

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This paper presents an ultra-wideband injection-locked frequency divider (ILFD) design which is applicable to a multi-applications system. A transformer-based multi-order resonator is utilized in the ILFD to attain a flat phase response. The passive injection-boosted technique is proposed to increase the injection signal amplitude and thus widen the locking range. With the injection-boosted technique and the multi-order resonator, the proposed ILFD demonstrates a measured locking range of 50 GHz, covering 48 GHz to 98 GHz. The divider designed in a 40-nm process consumes a DC power of 11.2 mW excluding buffers and occupies a core size of 0.38 × 0.63 mm 2 .

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A Wide Tuning Range, Low Phase Noise, and Area Efficient Dual-Band Millimeter-Wave CMOS VCO Based on Switching Cores

Cited by 32 publications

References 34 publications

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

An ultra-wideband injection-locked frequency divider with a multi-order resonator and the passive injection-boosted technique

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