A Wide Tuning Range Voltage Controlled Oscillator with a High Tunable Active Inductor

Kia, Hojjat Babaei; A’ain, Abu Khari

doi:10.1007/s11277-014-1839-3

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…Gyrator-C Active Inductor (AI). Several active inductors have been proposed [4,[9][10][11][12][13][14][15][16][17][18]. Most are designed on the basis of the gyrator-C topology: (1) single-ended active inductors [9][10][11][12][13] and (2) differential active inductors [14][15][16][17].…”

Section: Tunable Active Inductor In Bpfmentioning

confidence: 99%

“…Both gate voltages of 0 and 5 are controllable by tuning 1 , 2 , 1 , and 6 , which controls current of 0 and 5 . 2 , 3 , and 4 control small signal parameters like 2 , 3 , 4 , 2 , and 4 . For the small signal model of the proposed active inductor, the input impedance equals…”

Section: Tunable Active Inductor In Bpfmentioning

confidence: 99%

“…Inductors are bulky and expensive, significantly increasing the instability of integration and manufacturing cost. Tunable AC achieves in a wide capacitive range from 40 fF to 1 pF [1,3] and tunable AI achieves in a wide inductive range from 1 nH to 300 nH [4]. Therefore, using AC and AI to produce a small size and low cost BPF with tunable gain, tunable center frequency, and tunable bandwidth is a feasible and cost-effective solution.…”

Section: Introductionmentioning

confidence: 99%

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Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

Wang

Chen

2017

VLSI Design

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A classic second-order coupled-capacitor Chebyshev bandpass filter using resonator of tunable active capacitor and inductor is presented. The low cost and small size of CMOS active components make the bandpass filter (BPF) attractive in fully integrated CMOS applications. The tunable active capacitor is designed to compensate active inductor's resistance for resistive match in the resonator. In many design cases, more than 95% resistive loss is cancelled. Meanwhile, adjusting design parameter of the active component provides BPF tunability in center frequency, pass band, and pass band gain. Designed in 1.8 V 180 nanometer CMOS process, the BPF has a tuning frequency range of 758-864 MHz, a controllable pass band of 7.1-65.9 MHz, a quality factor of 12-107, a pass band gain of 6.5-18.1 dB, and a stopband rejection of 38-50 dB.

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Section: Tunable Active Inductor In Bpfmentioning

confidence: 99%

Section: Tunable Active Inductor In Bpfmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

Wang

Chen

2017

VLSI Design

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“…This article also demonstrates results for 2 bits (1.45 ∼ 1.88 GHz) and 6 bits (1.82 ∼ 3.01 GHz) schemes. Kia and A'ain had designed 13 a high tunable AI‐based CMOS VCO, and its frequency range is 0.12 to 2 GHz (tuning range 94%) in 0.18 μm CMOS technology. Variation of the PN (phase noise) is from −80 to −90 dBc/Hz at 1 MHz frequency offset, and DC power dissipation is 7 mW.…”

Section: Introductionmentioning

confidence: 99%

Tunable active inductor based VCO and BPF in a single integrated design for wireless applications in 90 nm CMOS process

Faruqe

Lim²,

Amin³

2020

Engineering Reports

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This article proposes a tunable active inductor (AI)‐based voltage‐controlled oscillator (VCO) andbandpass filters (BPF) on a single integrated design in 90 nm CMOS process for wireless applications. By exploiting component sharing technique through single pole double throws switching method, a common AI is shared between VCO and BPFs. As the passive inductor is replaced by the AI and shared, silicon area consumption is significantly reduced. Transforming the inductor in tunable mode benefits to eliminate MOS varactors for tuning purposes; one step forward to reduce silicon area consumption. Operating as VCO, its frequency ranges from 1.93 to 6.22 GHz (tuning scope is 105%) for tuning voltage of 0.2 ∼ 1 V. The DC power consumption varies from 1.83 to 3.84 mW, and differential output power is 3.39 to − 2.99 dBm. The phase noise varies from − 81.32 to − 76.89 dBc/Hz, and the figure of merit has a value of − 148.74 dBc/Hz at 5.03 GHz frequency. While acting as BPF, two approaches of center frequency tuning are applied. The voltage tuning yields center frequency of 8.43 ∼ 7.08 GHz along with the maximum gain of 10.29 dB at 7.81 GHz. The capacitive tuning outputs frequency tuning of 7.64 ∼ 7.06 GHz. The BPF consumes DC power of 2.56 to 2.27 mW (voltage tuning) and 2.40 mW (capacitive tuning). The proposed design occupies a layout area of 1215.6 μm2. All the simulations have been performed considering parasitic elements evolved from the extraction of layout. Finally, a quantitative comparison and justification of the proposed design are made with respect to other published works.

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Design of Ultra-Low Power High-Q Single Ended Active Inductors for IF BPF of Receiver Frontend Using 130 nm BiCMOS Technology

Sachan

Goswami

Misra

2021

Wireless Pers Commun

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A Wide Tuning Range Voltage Controlled Oscillator with a High Tunable Active Inductor

Cited by 8 publications

References 6 publications

Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

Tunable active inductor based VCO and BPF in a single integrated design for wireless applications in 90 nm CMOS process

Design of Ultra-Low Power High-Q Single Ended Active Inductors for IF BPF of Receiver Frontend Using 130 nm BiCMOS Technology

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