A wideband BiCMOS thermal noise canceling low noise amplifier with temperature compensation

Abstract

A BiCMOS wideband thermal noise canceling low noise amplifier is presented. This BiCMOS design can achieve significant power consumption reduction comparing to the pure CMOS implementation with the same topology. A novel temperature compensation biasing circuit is also proposed for this BiCMOS noise canceling LNA topology to achieve relatively temperature independent gain. Realized in Tower Jazz 0.18 lm SiGe technology, the measured S 21 of the proposed LNA is 17.8 dB with a 23dB bandwidth of 3.3 GHz at room temperature. The measured gain variation from 240 to 1 808C is within 6 0.4 dB. The measured minimum noise figure at room temperature is 1.9 dB when matched to 50 X. The chip consumes about 0.2 3 0.3 mm 2 area excluding pads and dissipates about 8 mA DC current from a single 1.8 V supply. Figure 1 Simplified schematic of the conventional pure CMOS thermal noise canceling wideband LNA