The half-Heusler alloys have not only been recognized
for spintronic
and memory devices but also for thermoelectric applications. In this
research work, the detailed study for thermoelectric parameters of
RuCrX (X = Si, Ge, Sn) half-Heusler alloys has been carried out by
using the pseudopotential approach alongside the Boltzmann transport
theory. The RuCrX (X= Si, Ge, Sn) was reported stable in C1
b
-type structure by means of energy-volume
optimization, elastic stability criteria, positive phonon frequencies
in phonon dispersion curves, and formation energies. The all important
thermoelectric properties of these alloys have not yet been explored.
The thermoelectric properties such as Seebeck coefficient, electronic
part of thermal conductivity, electrical conductivity, and power factor
have been discussed within a specific temperature range (300–1200
K). The calculated value of the power factor was found to be 5.11
× 1011 W/(m K2 s) for RuCrSi, 3.42 ×
1011 W/(m K2 s) for RuCrGe, and 1.85 ×
1011 W/(m K2 s) for RuCrSn at 1200 K.