Above 400-K robust perpendicular ferromagnetic phase in a topological insulator

Tang, Chi; Chang, Cui Zu; Zhao, Gejian; Liu, Yawen; Jiang, Zilong; Liu, Chao Xing; McCartney, Martha R.; Smith, David J.; Chen, Tingyong; Moodera, Jagadeesh S.; Shi, Jing

doi:10.1126/sciadv.1700307

Cited by 161 publications

(172 citation statements)

References 35 publications

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“…The optimized films had the room-temperature saturation magnetization (M s ) of 99 emu/cm 3 (RT bulk value: 110 emu/cm 3 ) with an H c of 2.4 Oe, which was the lowest value ever reported for TmIG films. [7][8][9][10]12 TmIG films with low coercive field require low current induced effective field to switch the magnetization so that the current density of magnetization switching can be reduced. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…7,8 The PMA was originated from magnetization-lattice coupling under sufficient tensile strain, and overcomes the shape anisotropy, owing to the large magnetostriction constant of TmIG. Anomalous Hall effect was observed in TI/TmIG heterostructure up to a temperature as high as 400K, 9 making TI/TmIG a very promising candidate for realization of QAHE at elevated temperature. Moreover, a current-induced magnetization switching has been demonstrated in Pt/TmIG heterostructure.…”

Section: Introductionmentioning

confidence: 99%

“…These can be applied to data storage, magnetic random access memory, logic/memory utilizing domain wall. 10 Most reported TmIG films have been grown by pulsed laser deposition (PLD), [7][8][9][10]12 which is known to deposit thin films in a limited small area. Using magnetron sputtering to grow TmIG thin films is preferred because sputtering has been widely used in larger scale applications.…”

Section: Introductionmentioning

confidence: 99%

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High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering

Tseng

Lin

et al. 2017

AIP Advances

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High-quality single-crystal thulium iron garnet (TmIG) films of 10-30 nm thick were grown by off-axis sputtering at room temperature (RT) followed by post-annealing. X-ray photoelectron spectroscopy (XPS) was employed to determine the TmIG film composition to optimize the growth conditions, along with the aid of x-ray diffraction (XRD) structural analysis and atomic force microscope (AFM) for surface morphology. The optimized films exhibited perpendicular magnetic anisotropy (PMA) and the saturation magnetization at RT was ∼99 emu/cm3, close to the RT bulk value ∼110 emu/cm3 with a very low coercive field of ∼2.4 Oe. We extracted the H⊥ of 1734 Oe and the peak-to-peak linewidth ΔH of ferromagnetic resonance are only about 99 Oe, significantly lower than that of PLD grown TmIG film and bulk single crystals. The high-quality sputtered single-crystal TmIG films show great potential to be integrated with topological insulators or heavy metals with strong spin-orbit coupling for spintronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering

Tseng

Lin

et al. 2017

AIP Advances

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“…It was reported that TmIG films had been grown mostly by pulsed laser deposition (PLD) 7–9,11,12 . However, the small deposition area is the major shortcoming of PLD, limiting its application in industry.…”

Section: Introductionmentioning

confidence: 99%

High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain

Tseng

Fanchiang

et al. 2018

Sci Rep

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Thulium iron garnet (TmIG) films with perpendicular magnetic anisotropy (PMA) were grown on gadolinium gallium garnet (GGG) (111) substrates by off-axis sputtering. High-resolution synchrotron radiation X-ray diffraction studies and spherical aberration-corrected scanning transmission electron microscope (Cs-corrected STEM) images showed the excellent crystallinity of the films and their sharp interface with GGG. Damping constant of TmIG thin film was determined to be 0.0133 by frequency-dependent ferromagnetic resonance (FMR) measurements. The saturation magnetization (Ms) and the coercive field (Hc) were obtained systematically as a function of the longitudinal distance (L) between the sputtering target and the substrate. A 170% enhancement of PMA field (H⊥) was achieved by tuning the film composition to increase the tensile strain. Moreover, current-induced magnetization switching on a Pt/TmIG structure was demonstrated with an ultra-low critical current density (jc) of 2.5 × 106 A/cm2, an order of magnitude smaller than the previously reported value. We were able to tune Ms, Hc and H⊥ to obtain an ultra-low jc of switching the magnetization, showing the great potential of sputtered TmIG films for spintronics.

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“…Owing to the closely matched lattice structures, crystalline (S)GGG is widely used as the growth substrate for a general class of iron garnets described by X 3 Fe 5 O 12 (XIG) [16,17] with spintronic applications, such as TIG [18][19][20][21][22], YIG [23][24][25][26][27][28][29][30][31][32][33][34][35], BIG [36][37][38], HIG [39], TbIG [40] and GdIG [41] (X = Tm, Yb, Bi, Ho, Tb and Gd, respectively). The epitaxial strain induced by the (S)GGG substrate, tunable by the B-site substitution, can be used to effectively manipulate the magnetization and magnetic easy-axis of the XIG films.…”

Section: Introductionmentioning

confidence: 99%

Terahertz response of gadolinium gallium garnet (GGG) and gadolinium scandium gallium garnet (SGGG)

Sabbaghi

Hanson

Shi

et al. 2020

Journal of Applied Physics

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We report the magneto-optical response of Gadolinium Gallium Garnet (GGG) and Gadolinium Scandium Gallium Garnet (SGGG) at frequencies ranging from 300 GHz to 1 THz, and determine the material response tensor. Within this frequency window, the materials exhibit nondispersive and low-loss optical responses. At low temperatures, significant THz Faraday rotations are found in the (S)GGG samples. Such strong gyroelectric response is likely associated with the high-spin paramagnetic state of the Gd 3+ ions. A model of the material response tensor is determined, together with the Verdet and magneto-optic constants.

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Above 400-K robust perpendicular ferromagnetic phase in a topological insulator

Abstract: Topological surface states reveal proximity-induced ferromagnetism with perpendicular anisotropy persisting above 400 K.

Cited by 161 publications

References 35 publications

High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering

High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering

High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain

Terahertz response of gadolinium gallium garnet (GGG) and gadolinium scandium gallium garnet (SGGG)

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