Absorption edge, urbach tail, and electron-phonon interactions in topological insulator Bi2Se3 and band insulator (Bi0.89In0.11)2Se3

Abstract

We employ infrared transmission spectroscopy to explore the temperature-dependent absorption edge and electron-phonon (e-ph) interaction in topological insulator Bi2Se3 and band insulator (Bi0.89In0.11)2Se3 films. Upon heating from 5 K to 300 K, the absorption edge shifts from 262 to 249 meV for Bi2Se3 and from 367 to 343 meV for (Bi0.89In0.11)2Se3. By analyzing the temperature dependence of the Urbach tail, the significant role of Raman-active phonon mode Eg2 in e-ph interaction is identified, which agrees well with the ab initio calculation.

Thickness Effect on Electro-Optical Characteristics of Mos2/P-Si Heterojunction Devices Fabricated by Aerosol Jet Printing

“…This finding can be attributed to the smaller localized state density in the band gap region. The Urbach energy (Eu) value is defined as the width of the localized state in the bandgap or width of the band tail and it is a critical optical parameter to understand the structural disorder in thin films [48]. Eu is given by the following equation [49]:…”

Influence of magnetic (Fe) and non-magnetic (In) doping on structural, magnetic, and weak anti-localization properties of Bi2Te3 topological insulator

“…Which results the changes in host quantum effect with some interesting phenomena, such as the existence of magnetic monopole [23], quantum anomalous Hall effect (QAHE) [24,25], magneto-optical effect [26], neutral Majorana Fermion [27], etc. Although the existence of disorder-defects and non-magnetic doping in these QMs are not studied well, but there exists very less evidence in which it is claimed that the quantum features of the host are strongly influenced by them [12,[28][29][30][31][32][33]. So, much study is needed to get more information on this part.…”

“…depending on the position and concentration of dopants as well as the type (n or p) of host. There exists less amount of reports about non-magnetic perturbations and disorder involvement in Bi-based quantum materials [12,[28][29][30][31][32][33], which requires a details study of that part.…”

Электрон-Фононное Взаимодействие В Адсорбционной Модели Поверхностного Димера

“…Следует, к сожалению, отметить, что вопрос о роли электрон-фононного взаимодействия в адсорбции практически не изучен (см., например, [4,14]), хотя, с другой стороны, наблюдается возрастающий интерес к электрон-фононным эффектам в эпитаксиальных [15,16] и свободных [17][18][19] двумерных слоях и топологических изоляторах [20,21]. Поэтому в задаче об адсорбции изза дефицита информации мы воспользовались простейшей моделью электрон-фононного взаимодействия, аналогичной широко используемой однофононной модели Холстейна [22,23].…”