Accelerated life testing and failure analysis of single stage MMIC amplifiers

Christianson, K. A.; Roussos, J.A.; Anderson, W. T.

doi:10.1109/16.297740

Cited by 9 publications

(1 citation statement)

References 26 publications

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“…El exceso de circulación continuada de corrientes por puerta se asocia generalmente a efectos indeseados sobre la eficiencia de los MMICs, [49,89], y en determinadas aplicaciones se ha constatado que dichas corrientes pueden acarrear una disminución en el rendimiento de los dispositivos, [90J. Con el fin de limitar las corrientes circulando por la puerta de los transistores, los diseñadores de amplificadores MMIC de potencia suelen incluir en sus dispositivos resistencias en serie con la puerta de los FETs, [49].…”

Section: Redes De Polarizaciónunclassified

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

Penalva¹

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El trabajo de tesis doctoral que se presenta aborda diferentes aspectos relativos a la caracterización eléctrica y térmica de amplificadores MMIC de potencia. Los resultados obtenidos a partir del estudio teórico y experimental llevado a cabo han contribuido a un mejor III entendimiento del comportamiento de los amplificadores MMIC de potencia empleados, así como a un mejor diseño de los prototipos de transmisor desarrollados.

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Section: Redes De Polarizaciónunclassified

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

Penalva¹

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Role of substrate current in the reliability life testing of gaas mmics

Christianson

Mittereder

Roussos

et al. 1996

Qual. Reliab. Engng. Int.

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GaAs monolithic microwave integrated circuits (MMICs) typically show a dramatic increase in circuit current when operated above 200°C. This increase in current has been found to be in good agreement with a summation of the estimated substrate current flowing from the individual components of these circuits through the bulk GaAs to the back metalization. Although the substrate current for these MMICs was small at room temperature, it can be a substantial portion of the total circuit current at the high temperatures typical for accelerated life testing. A procedure was developed to compensate for the substrate current, thus allowing normal circuit operation during high temperature life testing.

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PAE improvement and compensation of small‐signal gain drift due to temperature on power amplifiers through active biasing

Torregrosa‐Penalva

López

Ortega-González

et al. 2003

Micro & Optical Tech Letters

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Power millimetre‐wave band transmitters are commonly formed by a chain of MESFET or HEMT GaAs MMIC power amplifiers. Under large‐signal conditions the reverse gate output current, which appears at the gate port of those devices due to drain‐gate breakdown mechanisms, causes a drop in the power amplifier's power added efficiency (PAE) figure, thus affecting the entire transmitter reliability. Additionally, it is desirable to obtain a stable performance from the transmitters for different ambient temperatures. In particular, millimetre‐wave wireless systems, such as the local multipoint distribution system (LMDS), require constant small signal gain for a wide range of temperatures. In this paper, an active bias network is used to compensate for both effects. The performance of the active bias network is shown to be superior, in terms of the power amplifier's PAE and the compensation of the power amplifier's small signal gain drifts due to temperature, to a conventional resistive divider when used for biasing the power amplifier. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 389–392, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11069

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Accelerated life testing and failure analysis of single stage MMIC amplifiers

Cited by 9 publications

References 26 publications

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

Role of substrate current in the reliability life testing of gaas mmics

PAE improvement and compensation of small‐signal gain drift due to temperature on power amplifiers through active biasing

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