Acceptor diffusion and segregation in (AlxGa1−x)0.5In0.5P heterostructures

Grillot, P. N.; Stockman, S. A.; Huang, James; Bracht, H.; Chang, Yuchou

doi:10.1063/1.1461060

Cited by 8 publications

(8 citation statements)

References 21 publications

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“…6(a) be accurately described by both (14) and (15). In other words, and in (15) must be of the form and given in (14), while and in (14) must be of the form and given in (15). Combining these two observations thus results in the equation (16) TABLE III This implied form of the coefficients and can be verified by fitting the data in Fig.…”

Section: (A) Indicates That Al Gamentioning

confidence: 65%

“…5(b) for stress times less than 4000 hours, the epoxy degradation of the group 3 LEDs in Fig. 6(a) compromises our ability to directly confirm (14) for stress times greater than 22 000 hours in Fig. 5(b).…”

Section: To Describe Al Gamentioning

confidence: 76%

“…5(b) and in Fig. 6(a) be accurately described by both (14) and (15). In other words, and in (15) must be of the form and given in (14), while and in (14) must be of the form and given in (15).…”

Section: (A) Indicates That Al Gamentioning

confidence: 97%

“…In P LED degradation is described by an equation of the form (14) where and are independent of current density, but vary from wafer to wafer in Fig. 5(a), and vary with stress time in Fig.…”

Section: Thus Demonstrates That Al Gamentioning

confidence: 99%

See 3 more Smart Citations

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Grillot

Krames

Zhao

et al. 2006

IEEE Trans. Device Mater. Relib.

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Both fixed current density and variable current density stress conditions are used to study light output degradation of (Al x Ga 1 x ) 0 5 In 0 5 P light-emitting diodes (LEDs) as functions of LED stress current and LED stress time. Quantification of the resulting data indicates that (Al x Ga 1 x ) 0 5 In 0 5 P LED degradation, , is a linear function of current density, , and a logarithmic function of stress time, , for stress times as long as 60 000 hours in duration. For stress times long enough and current densities high enough to saturate any short-term effects, (Al x Ga 1 x ) 0 5 In 0 5 P LED degradation is therefore quantified by the empirical equation = 1 + 2 + ( 3 + 4 ) ln( ), where 1 , 2 , 3 , and 4 are independent of LED stress current and LED stress time. Within the limits of the data presented here, this equation is shown to accurately describe light output degradation of individual LED lamps, the average degradation behavior of individual LED wafers, and the average degradation behavior of a distribution of multiple LED wafers. The resulting expression may thus provide helpful guidance in quantifying the tradeoff between LED flux and LED degradation, both of which depend linearly on current density.

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Section: (A) Indicates That Al Gamentioning

confidence: 65%

Section: To Describe Al Gamentioning

confidence: 76%

Section: (A) Indicates That Al Gamentioning

confidence: 97%

Section: Thus Demonstrates That Al Gamentioning

confidence: 99%

See 2 more Smart Citations

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Grillot

Krames

Zhao

et al. 2006

IEEE Trans. Device Mater. Relib.

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“…3,16 While this paper focuses on dopant interactions in Al 0.5 In 0.5 P, this work was part of a much broader effort to improve the understanding and control of acceptor diffusion and segregation in the p-type regions of III-V heterostructures. 3,[17][18][19][20] Since the acceptor species was thus the dopant of primary concern, we refer to the acceptor species (Mg) as the dopant species throughout this paper, and we refer to the various donor species as counterdopants.…”

Section: Methodsmentioning

confidence: 99%

Donor-acceptor interactions in Al0.5In0.5P

Grillot

Stockman

Huang

et al. 2002

Journal of Elec Materi

Self Cite

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INTRODUCTIONWide-bandgap III-V semiconductors, such as Al 0.5 In 0.5 P, are technologically important due to their common use as carrier-confining layers in various devices, including (Al x Ga 1Ϫx ) 0.5 In 0.5 P laser diodes and light emitting diodes. 1,2 In order to more effectively optimize the performance of such devices, it is, therefore, important to develop a more complete understanding of both n-type and p-type doping of such wide-bandgap semiconductors. Thus, any growth parameters or impurity species that alter donor or acceptor incorporation or diffusion properties may have important implications on device design, and it is, therefore, important to thoroughly understand such effects. With regard to such properties, we have previously demonstrated that the deep donor, oxygen, enhances Mg incorporation in Al 0.5 In 0.5 P. 3 Similar to our previous observations regarding Mg-oxygen interactions in Al 0.5 In 0.5 P, various other research groups have reported that shallow-donor species, such as S or Si, have enhanced acceptor incorporation in III-V semiconductors. [4][5][6][7][8][9][10][11][12][13] In addition to enhancing acceptor incorporation, such shallow-donor species have also been shown to suppress acceptor diffusion in III-V semiconductors, 4-13 thus providing motivation to investigate the potential impact of the deep donor, oxygen, on Mg diffusion in Al 0.5 In 0.5 P. In addition to this investigation of Mg-oxygen dopant interactions in Al 0.5 In 0.5 P, we also consider donor-acceptor interactions between Mg and the shallow donors, Te, S, and Si, to allow the reader to more effectively compare our results on Mg-oxygen dopant interactions to previous reports on dopant interactions between shallow donors and Zn or Mg acceptors. To the best of our knowledge, this paper offers the first detailed study of donor-acceptor interactions in Al 0.5 In 0.5 P, and it is also the first report we are aware of that compares the effect of deep-donor species to those of shallow-donor species on acceptor incorporation and diffusion in III-V semiconductors.In addition to the potential effect of oxygen on Mg diffusion in Al 0.5 In 0.5 P, such investigations of Mgoxygen dopant interactions may have major consequences on the growth of Al-bearing compounds, such as Al x Ga 1Ϫx As, Al 0.5 In 0.5 P, and perhaps AlGaN as well, where unintentional oxygen incorporation is often a source of concern. For example, Mg is known Dopant interactions are considered between Mg-acceptor atoms and various donor species, including the deep donor; oxygen; and the shallow donors, Te, S, and Si, in Al 0.5 In 0.5 P. While each of these donor species is shown to suppress Mg diffusion and enhance Mg incorporation in Al 0.5 In 0.5 P, careful analysis of the concentration profiles for these various donor species reveals subtle differences in the shape of the donor and acceptor dopant profiles, suggesting subtle differences in both the type of donor-acceptor interactions involved and in the effectiveness of the various donor species at suppressing Mg ...

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Diffusion in Semiconductors

Shaw¹

2006

Springer Handbook of Electronic and Photonic Materials

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Acceptor diffusion and segregation in (AlxGa1−x)0.5In0.5P heterostructures

Cited by 8 publications

References 21 publications

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Donor-acceptor interactions in Al0.5In0.5P

Diffusion in Semiconductors

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