Acceptor-exciton complexes in ZnO: A comprehensive analysis of their electronic states by high-resolution magnetooptics and excitation spectroscopy

Gutowski, J.; Presser, N.; Broser, I.

doi:10.1103/physrevb.38.9746

Cited by 159 publications

(109 citation statements)

References 31 publications

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“…23 and the excitation measurements of Ref. 1. In a similar way, the weak transition located about 1.1 meV above I 4 in as grown ZnO (the line labeled as I * 4 in Fig.…”

Section: Do We Observe the Nitrogen Bound Excitons In Zno:n ?supporting

confidence: 50%

“…Therefore, an attribution of these lines I 5 to I 11 to (A 0 , X) complexes was given in Ref. 1. This is in contradiction to the magneto-absorption data of Ref.…”

Section: Introductioncontrasting

confidence: 47%

“…1 this line was attributed to an acceptor bound exciton. The latter conclusion was based on the thermalization behavior of the PL components in B c. 1 Indeed, in PL measurements the thermalization properties are determined by the splitting of the excited state of the complex. Therefore, the intensities of the (D 0 , X(Γ 7 )) −→ D 0 transitions (see Fig.…”

Section: Thermalization Properties In Emissionmentioning

confidence: 99%

“…1,2,3,4 Although the origin of these transition lines remained in the focus of intensive research over more than 30 years, 1,2,3,4,5,6,7,8,9 a convergent picture concerning the nature of the impurities (donor or acceptor character) as well as the symmetry of the valence band hole (Γ 7 or Γ 9 character) involved in the complexes, has not yet emerged.…”

Section: Introductionmentioning

confidence: 99%

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Magneto-optical properties of bound excitons in ZnO

et al. 2004

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We present results of magneto-optical measurements and theoretical analysis of shallow bound exciton complexes in bulk ZnO. Polarization and angular dependencies of magneto-photoluminescence spectra at 5 T suggest that the upper valence band has Γ7 symmetry. Nitrogen doping leads to the formation of an acceptor center that compensates shallow donors. This is confirmed by the observation of excitons bound to ionized donors in nitrogen doped ZnO. The strongest transition in the ZnO:N (I9 transition) is associated with a donor bound exciton. This conclusion is based on its thermalization behavior in temperature-dependent magneto-transmission measurements and is supported by comparison of the thermalization properties of the I9 and I4 emission lines in temperature-dependent magneto-photoluminescence investigations.

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“…23 and the excitation measurements of Ref. 1. In a similar way, the weak transition located about 1.1 meV above I 4 in as grown ZnO (the line labeled as I * 4 in Fig.…”

Section: Do We Observe the Nitrogen Bound Excitons In Zno:n ?supporting

confidence: 50%

“…Therefore, an attribution of these lines I 5 to I 11 to (A 0 , X) complexes was given in Ref. 1. This is in contradiction to the magneto-absorption data of Ref.…”

Section: Introductioncontrasting

confidence: 47%

Section: Thermalization Properties In Emissionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Magneto-optical properties of bound excitons in ZnO

et al. 2004

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“…High-quality bulk ZnO is typically dominated by a series of sharp lines, probably due to bound excitons associated with neutral donors 24 or very shallow neutral acceptors. 25 In the present case, the strongest of these lines is at 3.3629 eV, with somewhat weaker lines at 3.3598, 3.3606, and 3.3568, in order of intensity. Phonon replicas of these lines are seen near 3.29 eV.…”

mentioning

confidence: 79%

Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

Look

Reynolds

Litton

et al. 2002

Applied Physics Letters

1,261

681

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An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity=4×101 Ω cm; hole mobility=2 cm2/V s; and hole concentration=9×1016 cm−3. Photoluminescence measurements in this N-doped layer show a much stronger peak near 3.32 eV (probably due to neutral acceptor bound excitons), than at 3.36 eV (neutral donor bound excitons), whereas the opposite is true in undoped ZnO. Calibrated, secondary-ion mass spectroscopy measurements show an N surface concentration of about 1019 cm−3 in the N-doped sample, but only about 1017 cm−3 in the undoped sample.

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Optical Properties of as-Grown and Proton Irradiated ZnO

Brink

Kunert

2002

phys. stat. sol. (b)

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Conventional photoluminescence spectroscopy (PL) shows several high energy optical transitions within the region 3.072 to 3.4345 eV from as-grown ZnO excited with a 257 nm UV line. Performing inelastic light scattering experiments (ILS), we probed some previously reported modes. Proton implantation caused drastic changes in the excitonic region and generates a broad band centered at about 650 nm (1.9 eV) In addition, we observed from both sides of the ZnO sample implantation-induced high-energy vibrational modes centered at about 1350 and 1600 cm --1 (0.167 and 0.198 eV, respectively). IntroductionThe low temperature luminescence of the ZnO semiconductor near the bandgap is dominated by several narrow lines due to the recombination of excitons bound to native impurities or structural defects. Such structural defects can be introduced by implantation. It is the purpose of this paper to investigate the effect of proton irradiation on the optical properties of excitons and vibrational modes of ZnO.

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Acceptor-exciton complexes in ZnO: A comprehensive analysis of their electronic states by high-resolution magnetooptics and excitation spectroscopy

Cited by 159 publications

References 31 publications

Magneto-optical properties of bound excitons in ZnO

Magneto-optical properties of bound excitons in ZnO

Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

Optical Properties of as-Grown and Proton Irradiated ZnO

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