Accurate Magnetic Coupling Coefficient Modeling of 3-D Transformer Based on TSV

H, Wu; Dong, Gang; Xiong, Wei; Zhi, Changle; Li, Shen; Zhu, Zhangming; Yang, Yintang

doi:10.1109/lmwc.2022.3195193

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2024

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Cited by 4 publications

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“…Based on TSV technology, miniaturized passive filters, couplers, power dividers and other functional components can be fabricated [1,2,3,4,5,6,7,8,9]. In order to meet the requirements of modern circuit system functions, the concept of TSV vertical switching has been proposed and simulated [10,11,12,13].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing residual stress on mobility of TSV vertical switch

Wang,

Ren,

Yin

et al. 2024

IEICE Electron. Express

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The effect of internal radial stress generated during the annealing process on the mobility of through-silicon via (TSV) vertical switch are analyzed in detail, by employing finite element software ANSYS and orthogonal experimental design method. The results show that, the TSV diameter has the largest effect on the mobility of the TSV vertical switch, while the equilateral triangle array produces the smallest effect of stress at the same distance.

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