Abstract:A capacitance and Current look-up table based large-signal Phemt-diode model is presented based on an ensemble of bias-dependent small-signal equivalent circuits. The model is capable of accurate simulation of bias-dependent smallsignal S-parameters and current performance over the dataacquisition bias range. Instead of charge model in conventional Root diode model, capacitance as function of voltage is used. Compared to charge model, capacitance gives more accuracy that fits to higher order of derivatives and… Show more
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