Activation Energy for the Surface Migration of Tungsten in the Presence of a High-Electric Field

Bettler, Philip C.; Charbonnier, F. M.

doi:10.1103/physrev.119.85

Cited by 183 publications

(56 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Nagaoka et al also fabricated a nanotip by applying a negative high electric field to a contaminated W<111> tip [15]. There were also reports on the use of ion back bombardment (16,17) or a thermal field method (18)(19)(20) to obtain nanotips. All of these methods require tedious procedures and high technical skills.…”

Section: Ecs Transactions 25 (10) 3-18 (2009)mentioning

confidence: 99%

Noble-Metal Covered W(111) Single-Atom Electron Sources

et al. 2009

View full text Add to dashboard Cite

Single-atom tips can be used as ideal point sources of electron beams. It has been shown that noble-metal covered W(111) singleatom tips can be reliably prepared and their lifetimes are long enough for real applications. These tips are both thermally and chemically stable, and can be regenerated in vacuum when accidentally damaged or contaminated. The atomic stacking remains the same each time it is regenerated. The small opening angle, smallest emitting area, high brightness, high spatial coherence, and high stability of these single-atom electron sources make them highly desirable for many applications. Both the brightness and spatial coherency of these electron sources are orders of magnitude better than those of the state-of-the-art electron sources used in electron microscopes. Application of these sources may significantly improve the performance and expand the capabilities of current electron microscopes, and open up many new possibilities in electron-beam based techniques.

show abstract

Section: Ecs Transactions 25 (10) 3-18 (2009)mentioning

confidence: 99%

Noble-Metal Covered W(111) Single-Atom Electron Sources

et al. 2009

View full text Add to dashboard Cite

show abstract

“…In order to determine the activation energy E for the self-diffusion of Ir the build-up method was employed [3,4,12] …”

Section: Methodsmentioning

confidence: 99%

“…One of them is the field electron microscopy (FEM) of multi-faced surface of the field emitter tip. To study the self-diffusion by means of FEM, the build-up procedure was applied as described by Sokolskaya [3] and Bettler and Charbonnier [4]. They demonstrated that annealing of a tungsten emitter tip at a high temperature in the presence of a high electric field resulted in a geometric deformation of the emitter tip.…”

Section: Introductionmentioning

confidence: 99%

Surface Self-Diffusion of Iridium: Field Electron Emission Study

Antczak

Błaszczyszyn

2000

Acta Phys. Pol. A

View full text Add to dashboard Cite

The self-diffusion of iridium was studied by means of field electron microscopy. The measurements, based on the well-known process of surface build-up, were carried out under the UHV conditions within the temperature range of 790-935 K. The activation energy for the diffusion was determined to be equal to 2.10f 0.10 eV/atom (48.4f 2.3 kcal/mol). This value is compared with activation energies for self-diffusion on other metal surfaces, as well as with those for self-diffusion of single iridium atoms and clusters on iridium, known from the field ion microscopy measurements.

show abstract

“…This was discussed in papers [5,6] with the conclusion that the effect is rather weak; the experiments were carried out under conditions for which the build-up effect could be neglected [13].…”

Section: Activation Energy Of Surface Self-diffusionmentioning

confidence: 99%

Self-Diffusion of Tungsten on Some Facets of Tungsten Microcrystal

Biernat

Błaszczyszyn

2008

Acta Phys. Pol. A

View full text Add to dashboard Cite

The field emission current fluctuation method was applied to investigate surface self-diffusion of tungsten on the (311) and (711) regions (along the zone line (211)- (100)) of a tungsten microcrystal (in the form of the field emitter tip of radius about 300 nm) in the temperature range 500-850 K. The surface diffusion parameters were obtained from spectral analysis of the current fluctuations. The results are discussed from the aspects of the substrate structure.

show abstract

Activation Energy for the Surface Migration of Tungsten in the Presence of a High-Electric Field

Cited by 183 publications

References 11 publications

Noble-Metal Covered W(111) Single-Atom Electron Sources

Noble-Metal Covered W(111) Single-Atom Electron Sources

Surface Self-Diffusion of Iridium: Field Electron Emission Study

Self-Diffusion of Tungsten on Some Facets of Tungsten Microcrystal

Contact Info

Product

Resources

About