Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS

Bhatti, Aqyan A.

doi:10.26153/tsw/8223

2020

DOI: 10.26153/tsw/8223

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Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS

Aqyan A. Bhatti¹

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Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS

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