Advances in 3D CMOS image sensors optical modeling: combining realistic morphologies with FDTD

Vianne, B.; Crocherie, Axel; Guissi, Sofiane; Sieger, Daniel; Calderon, Stephane; Rideau, D.; Wehbe-Alause, H.

doi:10.1109/sispad.2019.8870543

Cited by 1 publication

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“…The simulation takes into account the full optical stack and the metal reflector at the front of the device (at the contact side in figure 1). Details of the optical simulation can be found in [30]. The outcome of the simulation is an overall of 26% of the incoming photon to be absorbed within the volume of the device, for this architecture.…”

Section: Results and Comparisons With Experimentsmentioning

confidence: 99%

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Helleboid

Rideau

Grebot

et al. 2022

IEEE J. Electron Devices Soc.

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A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers' trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.Index Terms-avalanche breakdown probability, breakdown voltage, jitter, photon detection efficiency (PDE), single-photon avalanche diode (SPAD), Technology computer-aided design (TCAD) I. INTRODUCTION AND DEVICE STRUCTURESS INGLE-Photon Avalanche Diodes (SPAD) are key optoelectronic detectors for medical imaging, camera ranging, and automotive laser imaging detection and ranging (LiDAR) applications. Currently, the device leading the market of SPADs is a micrometric silicon (Si) PN junction associated with nearby CMOS electronics biasing the system above the breakdown voltage (BV) [1].The main figure of merit for the sensor sensitivity is the photon detection efficiency (PDE), which is the probability that a photon hitting the SPAD is detected. It can be evaluated by multiplying the probability that an incoming photon hits the photosensitive area of the sensor, the fill factor (FF), by the probability that the photon is absorbed within the Manuscript submitted the February 8th 2022. The authors gratefully acknowledge VIZTA project (https://www.vizta-ecsel.eu/) for

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Section: Results and Comparisons With Experimentsmentioning

confidence: 99%