Advances in SOI switched capacitors for 4G tunable antennas

Costa, J.; Carroll, Michael S.; Kerr, D.; Iversen, Christian Rye; Mason, P.; Tombak, A.; Bauder, Rudiger; Khlat, Nadim; Spears, E.

doi:10.1109/mwsym.2014.6848605

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…Currently, commercial RF switches include FET switches with SOl [3][4], SOS [5], GaN [6] technologies and RF MEMS [7]. Frequency (GHz) 1· ·· ·· 90dBc j 2f there is no difference in the spectra found.…”

Section: Introductionmentioning

confidence: 99%

11 THz figure-of-merit phase-change RF switches for reconfigurable wireless front-ends

Moon

Seo

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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We report on GeTe-based, phase-change RF switches in a series configuration with an embedded micro heater for thermal switching. With heater parasitics reduced, these GeTe RF switches show on-state resistance of 0.12 ohm*mm and off-state capacitance of 0.12 pF/mm. The RF switch figure-of-merit is estimated to be 11 THz, which is about 15 times better than state-of-the-art silicon-on insulator switches. With 50-J.lm-wide GeTe switches, RF insertion loss was 0.25 dB and isolation was 24 dB at 20 GHz.Harmonic powers were suppressed >90 dBc at 35 dBm, meeting wireless requirements. The GeTe switches were characterized under W-CDMA signals without spectral regrowth up to 25 dBm.

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Section: Introductionmentioning

confidence: 99%

11 THz figure-of-merit phase-change RF switches for reconfigurable wireless front-ends

Moon

Seo

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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“…Tunable antennas have a great potential for enhancing the antenna bandwidth while keeping a low profile. MBTCs provides this important feature of tunability to the mobile phone antenna, 4/5G communication antennas, IOTs antenna with low insertion losses, and high quality factor [38,42,43]. The evolution of (4G-LTE) in smartphones resulted in the degradation of voice and data signal quality due to the integration of many electronic components with the antenna [44].…”

Section: Advanced Applicationsmentioning

confidence: 99%

RF MEMS electrostatically actuated tunable capacitors and their applications: a review

Khan

Younis

2021

J. Micromech. Microeng.

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This paper reviews the recent developments of micro-electromechanical system (MEMS) based electrostatically actuated tunable capacitors. MEMS based tunable capacitors (MBTCs) are important building blocks in advanced radio frequency communication systems and portable electronics. This is due to their excellent performance compared to solid state counterpart. Different designs, tuning mechanisms, and performance parameters of MBTCs are discussed, compared, and summarized. Several quantitative comparisons in terms of tuning range, quality factor (Q factor), and electrodes configurations are presented, which provide deep insight into different design studies, assists in selecting designs, and layouts that best suit various applications. We also highlight recent modern applications of tunable capacitors, such as mobile handsets, internet of things, communication sensors, and 5G antennas. Finally, the paper discusses different design approaches and proposes guidelines for performance improvement.

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“…[1][2][3][4][5][6][7][8] In these systems, tunable capacitors are a key component. RF-MEMS tunable capacitors are more suitable for these systems than any other devices such as p-i-n diodes, silicon-on-insulator (SOI) switches, [9][10][11] or barium-strontium-titanate (BST) type tunable capacitors, 12) thanks to their low loss and excellent linearity. [13][14][15][16][17][18][19] In order to use a MEMS tunable capacitor in a transmitting system, high-power handling is needed.…”

Section: Introductionmentioning

confidence: 99%

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Yamazaki

Kurui

Saito

et al. 2018

Jpn. J. Appl. Phys.

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In this paper, we report on a high-power handling RF-MEMS tunable capacitor that has a quadruple series capacitor (QSC) and a movable electrode using a slit with dielectric bridges (SDB) structure. The QSC structure consists of two fixed metal–insulator–metal (MIM) capacitors and two MEMS capacitor elements connected in series, and enables reduction of the RF voltage to the MEMS capacitors. The SDB structure is able to increase the release voltage without increasing the pull-in voltage. The combination of these structures enables improving power handling capabilities. A capacitor bank using QSC and SDB structures was fabricated by a micromachining process above CMOS control circuits. Measurement results demonstrate the excellent power handling capability up to +44 dBm for cold switching, and up to +35 dBm under hot switching. Moreover, the Q-factor of the capacitor bank is very high that is above 150 at 1 GHz, and the capacitance can be changed from 1.1 to 5.3 pF at a resolution of 4 bits by the internal control circuits thanks to monolithic integration.

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Advances in SOI switched capacitors for 4G tunable antennas

Cited by 11 publications

References 6 publications

11 THz figure-of-merit phase-change RF switches for reconfigurable wireless front-ends

11 THz figure-of-merit phase-change RF switches for reconfigurable wireless front-ends

RF MEMS electrostatically actuated tunable capacitors and their applications: a review

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

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